J. Electron. Mater.
 2022
DOI: 10.1007/s11664-022-09667-8
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Improved 4H-SiC Metal–Semiconductor Field-Effect Transistors with Double-Symmetric-Step Buried Oxide Layer for High-Energy-Efficiency Applications

Shunwei Zhu
1
,
Haiqiang Jia
2
,
Mengyu Dong
3
et al.
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