Improved characterization of multilayer antireflection coatings for broad-band semiconductor optical amplifiers

Lee, Jung-Keun; Kamiya, Toshio

doi:10.1109/50.908828

Cited by 6 publications

(3 citation statements)

References 22 publications

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“…A more fruitful approach is to use two or more layers and vary their thickness to obtain ultra-low reflectivity. Titanium oxide (TiO 2 ) and silicon oxide (SiO 2 ) are traditionally used as the high-index material and low-index material respectively for the multi-layer anti-reflection coatings [8]. In this experiment, we fabricated four-layer TiO 2 /SiO 2 thin films for AR coating of the two facets.…”

Section: Device Structure and Fabricationmentioning

confidence: 99%

High power polarization-insensitive 1.3 µm InGaAsP–InP quantum-well superluminescent emission diodes grown by MOVPE

Chen

et al. 2004

Semicond. Sci. Technol.

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Polarization-insensitive 1.3 µm InGaAsP-InP multi-quantum-well (MQW) superluminescent diodes (SLDs) were grown by MOVPE. Both compressively-strained wells and tensile-strained wells were employed in the active region. The SLDs were fabricated into ridge waveguide structures with 7 • tilted cavity and buried-window end facets. The two facets were coated with four layer anti-reflection TiO 2 /SiO 2 films and residual facet reflectivity was found to be less than 0.02%. The SLDs exhibited up to 16.9 mW optical output power and less than 1 dB polarization dependence of output power with less than 0.2 dB optical spectrum modulation at 200 mA.

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Section: Device Structure and Fabricationmentioning

confidence: 99%

High power polarization-insensitive 1.3 µm InGaAsP–InP quantum-well superluminescent emission diodes grown by MOVPE

Chen

et al. 2004

Semicond. Sci. Technol.

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“…Multiple-layer stack has been proposed to achieve broadband AR operation in silicon photonics [4][5] . The multi-layer structure will provide more freedom in AR coating designs such that low reflection and broadband operation can be achieved at the same time.…”

Section: Introductionmentioning

confidence: 99%

Monolithically integratable broad-band anti-reflection stacks for Si photonics platforms

Sun

Harjanne

Heimala

et al. 2023

Integrated Optics: Devices, Materials, and Technologies XXVII

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Based on commonly used dielectric materials in Si processing platforms, multiple-layer anti-reflection stacks were designed and fabricated, with the main goal of highly efficient light coupling for Si waveguides over a wide wavelength range. Initial characterization results indicate that a <-20dB light reflection was successfully achieved over 1310-1550 nm wavelength range over the whole 150mm wafer. The fluctuation of reflection spectra over the whole wafer was observed to be only 1-2 dB, which guarantees the high yield and mass production capabilities for further applications.

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“…4) In order to enhance the light trapping capability, one should reduce the reflectance of the light on the front side of the devices over the whole spectrum. Additionally, a broadband antireflective coating is highly desired in semiconductor optical amplifier (SOA) 5) and super luminescent diode (SLD) 6) to avoid the resonance between two facets. Therefore, broad band anti-reflective coating has got intensive interesting in the new century.…”

Section: Introductionmentioning

confidence: 99%

An ultrabroad band omni-directional anti-reflective coating with quasi-gradient refractive index distribution based on Si–SiO_xN_y–SiO₂ materials system

Qiu

Zhao

et al. 2014

Jpn. J. Appl. Phys.

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An ultrabroad band omni-directional antireflective coating was fabricated using both reactive magnetron sputtering and glancing angled electron beam evaporation methods. Gradient index amorphous Si, SiN x , and SiO x N y thin films were deposited by tuning the flow rate of the reactive gases, while the gradient index distribution of the nanoporous SiO2 stacks was obtained by rotating the angle of the substrate. A low average reflectivity of less than 2% at normal incidence in the wavelength range 280 to 3300 nm was achieved, and the average reflectivity over the angle range 15 to 89° was 3.7% for the wavelength between 300 and 1700 nm.

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Improved characterization of multilayer antireflection coatings for broad-band semiconductor optical amplifiers

Cited by 6 publications

References 22 publications

High power polarization-insensitive 1.3 µm InGaAsP–InP quantum-well superluminescent emission diodes grown by MOVPE

High power polarization-insensitive 1.3 µm InGaAsP–InP quantum-well superluminescent emission diodes grown by MOVPE

Monolithically integratable broad-band anti-reflection stacks for Si photonics platforms

An ultrabroad band omni-directional anti-reflective coating with quasi-gradient refractive index distribution based on Si–SiO_xN_y–SiO₂ materials system

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Improved characterization of multilayer antireflection coatings for broad-band semiconductor optical amplifiers

Cited by 6 publications

References 22 publications

High power polarization-insensitive 1.3 µm InGaAsP–InP quantum-well superluminescent emission diodes grown by MOVPE

High power polarization-insensitive 1.3 µm InGaAsP–InP quantum-well superluminescent emission diodes grown by MOVPE

Monolithically integratable broad-band anti-reflection stacks for Si photonics platforms

An ultrabroad band omni-directional anti-reflective coating with quasi-gradient refractive index distribution based on Si–SiOxNy–SiO2 materials system

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An ultrabroad band omni-directional anti-reflective coating with quasi-gradient refractive index distribution based on Si–SiO_xN_y–SiO₂ materials system