Improved charge control and frequency performance in InAs/AlSb-based heterostructure field-effect transistors

Bolognesi, C.R.; Caine, E. J.; Kroemer, H.

doi:10.1109/55.289476

Cited by 90 publications

(29 citation statements)

References 10 publications

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“…These dislocations notably pass away for a distance greater than a critical thickness (*0.2 lm) (Hooper et al 1993;Yamamoto et al 1997). Hitherto, several types of buffer layer techniques have been developed in order to grow high quality InAs layer (Bolognesi et al 1994;Yasuda et al 2000;Ballet et al 2001). However, these buffer layers are time consuming and are not cost-effective.…”

Section: Introductionmentioning

confidence: 99%

Molecular beam epitaxial growth and characterization of InAs layers on GaAs (001) substrate

et al. 2016

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High-quality InAs epilayers were grown onto GaAs (001) substrate by molecular beam epitaxy. The optimal growth conditions were examined over a wide range of substrate temperature, substrate offcut orientation, and As 4 /In flux ratio. The surface morphology, electrical and structural properties were investigated by Nomarski optical microscopy, Hall effect measurement, and X-ray diffraction, respectively. It is worth noting that InAs layers grown on GaAs (001) substrate with 2°offcut towards h110i have better crystalline quality and electrical properties than that grown on GaAs substrate without offcut. The results indicated that the layers grown at 400°C, with a group V/III flux ratio of 8.5, yielded to the highest electrical quality, with a Hall mobility of 22,420 cm 2 /Vs at 80 K and 12,970 cm 2 /Vs at room temperature. It is found that the top part of 5 lm-thick InAs layer exhibits a high Hall mobility of 77,380 and 25,275 cm 2 /Vs, at 80 and 300 K, respectively.

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Section: Introductionmentioning

confidence: 99%

Molecular beam epitaxial growth and characterization of InAs layers on GaAs (001) substrate

et al. 2016

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“…It is worth noting at this point that the InSb/ AlInSb material system has a type I band alignment 12 rather than the type II of more widely reported InAs/ AlSb HEMTs. [7][8][9][10][11] Holes within the channel are more strongly confined ͓Fig. 4͑a͒ inset͔ than in a type II system, especially at low temperatures where thermal excitation out of the QW is greatly reduced.…”

Section: Discussion and Device Modelingmentioning

confidence: 99%

“…Such an effect has been observed in a number of heterostructure systems, with a level of severity that can limit the usefulness of the device. 4,5 Further work on AlSb/ InAs systems has sought, with some success, to minimize this effect so that it is almost negligible at 293 K. 7,8 A related issue for the InAs/ AlSb material system is an enhanced gate leakage due to increased charge, created by impact ionization in the drain, drifting back to the gate contact. This is strongly enhanced as a result of the type II band alignment in such systems, whereby the holes in the valence band are not confined and so are not inhibited from drifting back to the gate contact.…”

Section: Introductionmentioning

confidence: 99%

Low temperature impact ionization in indium antimonide high performance quantum well field effect transistors

Orr

Buckle

Fearn

et al. 2006

Journal of Applied Physics

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The observation of a kink effect in the output characteristic of an InSb/ AlInSb quantum well field effect transistor structure at low temperature ͑1.6 K͒ is reported. The effect is strongly temperature dependent, and while just discernible at room temperature, it is greatly enhanced below ϳ120 K. At 1.6 K strong hysteresis is observed in the ͑output͒ forward characteristic of the device when sweeping the drain bias up and down. Corresponding instability is also observed in the gate leakage current as a function of gate voltage. We explain the effect by comparing with Monte Carlo simulations, observing strong hole accumulation under the gate region of the device as a result of significant impact ionization in the drain region. This accumulation is enhanced compared to the more common InAs/ AlSb type II system, due to the fact that InSb/ AlInSb has a type I band alignment. This inhibits the loss of holes to the gate contact, a significant leakage mechanism in type II systems. We show that the extent of the hysteresis is a good measure of the charge accumulation under the gate region and estimate accumulation by examination of the hysteresis compared with the results of the Monte Carlo simulation.

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“…Previous studies have shown that care must be taken in the fabrication of these devices or large increases in the output drain current (kink effect) occur [5][6]. Through the use of quantum wires with discrete subbands for the active regions of the device, the kink effect may be eliminated.…”

Section: Introductionmentioning

confidence: 98%

Phonon exacerbated quantum interference effects in III-V nanowire transistors

Gilbert

Banerjee

2007

J Comput Electron

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In recent years, a great deal of attention has been focused on the development of quantum wire transistors as a means of extending Moore's Law. Here we present, results of fully three-dimensional, self-consistent quantum mechanical device simulations of InAs tri-gate nanowire transistor (NWT). The effects of inelastic scattering have been included as real-space self-energy terms. We find that the position of dopant atoms in these devices can lead a reduction in the amount of scattering the carriers experience. We find that the combination of deeply buried dopant atoms and the high energy localization of polar optical phonon processes allow devices to recover their ballistic behavior even in the presence of strong inelastic phonon processes. However, we find that dopant atoms close to the source-channel interface cause severe quantum interference effects leading to significant performance reduction.

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Improved charge control and frequency performance in InAs/AlSb-based heterostructure field-effect transistors

Cited by 90 publications

References 10 publications

Molecular beam epitaxial growth and characterization of InAs layers on GaAs (001) substrate

Molecular beam epitaxial growth and characterization of InAs layers on GaAs (001) substrate

Low temperature impact ionization in indium antimonide high performance quantum well field effect transistors

Phonon exacerbated quantum interference effects in III-V nanowire transistors

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