Improved COMFETs with fast switching speed and high-current capability

Goodman, Alvin M.; Russell, John P.; Goodman, L.A.; Nuese, C. J.; Neilson, J.M.

doi:10.1109/iedm.1983.190445

Cited by 48 publications

(6 citation statements)

References 4 publications

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“…2 was obtained; this shows a knee at about 0.7 V (due to the built-in potential of the n+-p+ junction) and an on-resistance value of 0.07 s2 a t 20 A (with a gate voltage of 20 V). This on-resistance value for a p-channel COMFET with no minority-carrier lifetime control is strikingly similar to that of an n-channel COM-FET with the same active pellet area and drain-current-fall time (10-30 pS) [ 5 ] . The on-resistance value of 0.07 fi is a factor of about 30 lower than that of a p-channel MOSFET with the same blocking voltage and pellet size.…”

Section: Device Characterizationsupporting

confidence: 57%

High-power conductivity-modulated FET's (COMFET's) with a p-type channel

Russell

Goodman²,

Goodman³

et al. 1984

IEEE Electron Device Lett.

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In previous work, a conductivity-modulated field-effect transistor (COMFET*) having drastically reduced on-resistance was described; that device was based on n-channel MOS technology. In this letter, we report the development of a complementary device-the p-channel COMFET. These new p-channel COMFET's have demonstrated dc on-resistance values as low as 0.07 Q at 20 A (for a 3 mm X 3 m m pellet), while providing forward blocking voltages of

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Section: Device Characterizationsupporting

confidence: 57%

High-power conductivity-modulated FET's (COMFET's) with a p-type channel

Russell

Goodman²,

Goodman³

et al. 1984

IEEE Electron Device Lett.

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“…At the beginning of 1980s´, the on-state resistance of silicon unipolar devices has been found too high above the breakdown voltage of 600 V. This stimulated the invention of a MOS-controlled power device with a carrier injection from the side opposite to that of the MOS control. The original designation Power MOSFET with an Anode Region [11], The Insulated Gate Rectifier (IGR) [12] or Conductivity Modulated FET (COMFET) [13] unified later in the term Insulated Gate Bipolar Transistor (IGBT). Nowadays, the IGBT is the device of choice for the voltage classes ranging from 650 V to 6.5 kV.…”

Section: Igbtmentioning

confidence: 99%

The current status of power semiconductors

Vobecký

2015

FACTA U EE

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Trends in the design and technology of power semiconductor devices are discussed on the threshold of the year 2015. Well established silicon technologies continue to occupy most of applications thanks to the maturity of switches like MOSFET, IGBT, IGCT and PCT. Silicon carbide (SiC) and gallium nitride (GaN) are striving to take over that of the silicon. The most relevant SiC device is the MPS (JBS) diode, followed by MOSFET and JFET. GaN devices are represented by lateral HEMT. While the long term reliability of silicon devices is well trusted, the SiC MOSFETs and GaN HEMTs are struggling to achieve a similar confidence. Two order higher cost of SiC equivalent functional performance at device level limits their application to specific cases, but their number is growing. Next five years will therefore see the co-existence of these technologies. Silicon will continue to occupy most of applications and dominate the high-power sector. The wide bandgap devices will expand mainly in the 600 - 1200 V range and dominate the research regardless of the voltage class.

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“…This allows the IGBT to turn off more quickly than without the buffer layer, but it also causes the on-state voltage to increase. The total excess charge stored in the base is reduced be cause the heavily doped buffer layer reduces the injection efficiency of the emitter-base junction [7], and it introduces a layer of reduced carrier lifetime to the base (lifetime typ ically decreases as doping increases). The buffer layer also allows the low-doped base to be narrower than in a device without a buffer layer.…”

Section: Physical Descriptionmentioning

confidence: 99%

“…The time required to turn the device off is dominated by the open base switching time of the bipolar transistor portion of the device. Two methods have been proposed to reduce this time [7][8][9][10]. One is to include a high-doped buffer layer in the low-doped base and the other is to reduce the carrier lifetime in the low-doped base.…”

Section: Introductionmentioning

confidence: 99%

Performance trade-off for the Insulated Gate Bipolar Transistor: Buffer layer versus base lifetime reduction

Hefner

Blackburn

1986

1986 17th Annual IEEE Power Electronics Specialists Conference

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A one-dimensional analytic model for the Insulated Gate Bipolar Transistor (IGBT) which includes a high-doped buffer layer in the low-doped bipolar transistor base is developed. The model is used to perform a theoreti cal trade-off study between IGBTs with and without the buffer layer. The study is performed for devices of equal breakdown voltages, and the critical parameters chosen to "trade-off" are turn-off switching energy loss (related to turn-off time) and on-state voltage, both at a given current. In this study, as in reality, the two crit ical parameters are varied by: 1) adjusting the doping concentration and thickness of a buffer layer included as part of the bipolar transistor base, 2) adjusting the lifetime in the lowly doped bipolar transistor base with no buffer layer included, or by 3) a combination of 1) and 2). The results of the model predict that for equal breakdown voltages, an optimized device with a buffer layer has less switching energy loss for a given on-state voltage than an optimized device with no buffer layer. 27 u.s. Govemrnent work not proteCted by U.S. copyright.

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Improved COMFETs with fast switching speed and high-current capability

Cited by 48 publications

References 4 publications

High-power conductivity-modulated FET's (COMFET's) with a p-type channel

High-power conductivity-modulated FET's (COMFET's) with a p-type channel

The current status of power semiconductors

Performance trade-off for the Insulated Gate Bipolar Transistor: Buffer layer versus base lifetime reduction

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