Improved control of the phosphorous surface concentration during in‐line diffusion of c‐Si solar cells by APCVD

Davis, Kristopher O.; Jiang, Kaiyun; Demberger, Carsten; Zunft, Heiko; Haverkamp, Helge; Habermann, D.; Schoenfeld, Winston V.

doi:10.1002/pssr.201307020

Cited by 5 publications

(5 citation statements)

References 7 publications

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“…Trimethylaluminum and O 2 were used as precursors for the AlO x deposition [7]. For the SiO x films, silane and O 2 were used [18]. And finally, for TiO x , the precursors used were tetraisopropyl titanate (TPT) and H 2 O.…”

Section: Methodsmentioning

confidence: 99%

Tailoring the Optical Properties of APCVD Titanium Oxide Films for All-Oxide Multilayer Antireflection Coatings

Davis

Jiang²,

Habermann

et al. 2015

IEEE J. Photovoltaics

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In this paper, the optical properties and microstructure of titanium oxide (TiO x ) thin films deposited by in-line atmospheric pressure chemical vapor deposition (APCVD) are tailored to act as effective antireflection coatings (ARCs) in crystalline silicon solar cells. The ability to control the crystalline phase, microstructure, and optical properties of these TiO x films by varying the deposition conditions is demonstrated. Because the refractive index of TiO x can be widely varied by changing the deposition temperature, these films can be applied as single-or double-layer ARCs (DLARCs) in crystalline silicon solar cells featuring a thin front-side passivation layer (e.g., thermal silicon oxide, aluminum oxide) or as a rear-side capping layer in rear passivated cells. Reflectance measurements on oxide-based DLARCs deposited on anisotropically textured monocrystalline Si wafers are presented for unencapsulated samples, along with the modeled performance of similar structures encapsulated in ethylene-vinyl acetate under varying angles of incidence. In the experiments on unencapsulated samples, two of the oxide-based DLARCs outperform a standard SiN x ARC, and all four outperform the SiN x ARC when encapsulated.

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Section: Methodsmentioning

confidence: 99%

Tailoring the Optical Properties of APCVD Titanium Oxide Films for All-Oxide Multilayer Antireflection Coatings

Davis

Jiang²,

Habermann

et al. 2015

IEEE J. Photovoltaics

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“…A high throughput multiple chamber in-line atmospheric pressure chemical vapor deposition (APCVD) system has also been developed [128]. PSG is deposited using N 2 diluted SiH 4 , PH 3 and O 2 as precursor gases.…”

Section: Atmospheric Pressure Chemical Vapor Depositionmentioning

confidence: 99%

“…Increasing sheet resistance leads to higher V OC and J SC , but could come at the expense of increased series resistance (which reduces the fill factor). However, newer paste formulations that allow for good contact with >70 Ω•cm 2 emitters have recently been demonstrated, allowing current cells to feature higher sheet resistances [108,109,128,241].…”

Section: Front Side Metallizationmentioning

confidence: 99%

“…However, this can increase the risk of the paste etching completely through the emitter (i.e., punch through). Manipulation of the emitter profile during diffusion can mitigate this [101,128]. As mentioned in the emitter section, the trend for monocrystalline silicon cells has been towards lower surface concentration and deeper profiles which reduce emitter recombination losses and maintain good metal contact [100][101][102][103][104][105][106]255].…”

Section: Over Firing (Emitter/junction Damage)mentioning

confidence: 99%

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Manufacturing metrology for c-Si module reliability and durability Part II: Cell manufacturing

Davis

Rodgers

Scardera³

et al. 2016

Renewable and Sustainable Energy Reviews

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This article is the second article in a three-part series dedicated to reviewing each process step in crystalline silicon (c-Si) photovoltaic (PV) module manufacturing process: feedstock and wafering, cell fabrication, and module manufacturing. The goal of these papers is to identify relevant metrology techniques that can be utilized to improve the quality and durability of the final product. The focus of this article is on the cell fabrication process. In this review, the fabrication of c-Si PV cells is divided into four steps: (1) wet chemical processes; (2) emitter formation; (3) anti-reflection coating (ARC) and passivation deposition; and (4) metallization. Each of these processing steps can impact the final reliability and durability of PV modules deployed in the field, and here the failure modes and degradation mechanisms induced during cell manufacturing are explored. Additionally, a literature review of relevant measurement techniques aimed at reducing or eliminating the probability of such failures occurring is presented along with an assessment of potential gaps wherein the PV community could benefit from new research and demonstration efforts.

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“…In this paper, we demonstrate a doped poly-Si passivating electron contact deposited using an in-line atmospheric pressure chemical vapor deposition (APCVD) process, shown in figure 1. APCVD is a single sided deposition process that does not require any vacuum systems and has already been used for a wide range of applications in PV, including the deposition of surface passivation layers [53,54], antireflection coatings [55][56][57][58], rear reflectors [59], and dopant sources [60][61][62][63][64]. This time the process has been used to fabricate a doped poly-Si passivating contact.…”

Section: Introductionmentioning

confidence: 99%

Phosphorus-doped polysilicon passivating contacts deposited by atmospheric pressure chemical vapor deposition

Mousumi¹,

Ali²,

Gregory³

et al. 2021

J. Phys. D: Appl. Phys.

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In this work, we present a high quality tunnel oxide passivating, electron-selective contact that is formed using an in-situ phosphorus-doped polycrystalline silicon (poly-Si) layer deposited using an in-line atmospheric pressure chemical vapor deposition (APCVD) process. In-line APCVD is a single-sided deposition process that does not require vacuum systems and is well suited for high volume manufacturing. To fabricate this tunnel oxide passivating contact (TOPCon), we deposit an amorphous silicon (a-Si) layer on silicon oxide (SiO) passivated n-type crystalline silicon (c-Si) followed by an annealing step at around 910 ∘C, which provides solid phase crystallization. The contact shows an excellent surface passivation quality with an effective minority carrier lifetime of ≈4.2 ms and an implied open circuit voltage (iV ) of ≈717 mV after annealing without any additional hydrogenation process. Saturation current density (J ) of ≈18 fA cm−2 is recorded for this contact. Contact resistivity () of ≈50 mΩ·cm−2 and junction resistivity of ≈0.24 Ω·cm−2 are realized with e-beam evaporated aluminium (Al) metal contact.

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Improved control of the phosphorous surface concentration during in‐line diffusion of c‐Si solar cells by APCVD

Cited by 5 publications

References 7 publications

Tailoring the Optical Properties of APCVD Titanium Oxide Films for All-Oxide Multilayer Antireflection Coatings

Tailoring the Optical Properties of APCVD Titanium Oxide Films for All-Oxide Multilayer Antireflection Coatings

Manufacturing metrology for c-Si module reliability and durability Part II: Cell manufacturing

Phosphorus-doped polysilicon passivating contacts deposited by atmospheric pressure chemical vapor deposition

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