Improved critical dimension control in 0.8-NA laser reticle writers

Hamaker, Henry Chris; Valentin, Gregory E.; Martyniuk, Jerry; Martinez, Brenda G.; Pochkowski, Mike; Hodgson, Lorna D.

doi:10.1117/12.373353

Cited by 4 publications

(1 citation statement)

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“…Table 1 provides information on performance metric, resist process conditions and metrology tools. [4]. CD variation by the football effect will be very critical to CD accuracy, CD uniformity and MTT because it depends on pattern density.…”

Section: Methodsmentioning

confidence: 99%

Extended capability of laser writer for masks beyond 180-nm nodes

Cho

Lee

Kim

et al. 2002

21st Annual BACUS Symposium on Photomask Technology

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The demands for shrinking critical dimension (CD) and for tight control of CD uniformity on photomask are rapidly increasing. To keep pace with the demands, optical pattern generators using i-line resist is expanding its capability by continuously modifying hardware and writing strategies. Aside from their advantage of high throughput and layer-to-layer alignability for phase-shifting masks (PSM), this optical process has proven to show a good capability in view of the mean-to-target (MTT) control.In this paper, we investigate the extended capability of a laser writing tool for l8Onm node and below in view of process-induced limitations and systematic errors. We also discuss the effects of pattern density and of writing strategy on CD accuracy and pattern placement error. Since MTT and CD uniformity error for 1 80 nm generation device are critical for wafer printing, we scrutinize process-induced limitations and systematic errors. The process-induced limitations, related to pattern density and shape, are discussed along with the football effect and iso-dense bias.

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Section: Methodsmentioning

confidence: 99%