Improved Crystal Quality of Transparent Conductive Ga‐doped ZnO Films by Magnesium Doping Through Radio‐Frequency Magnetron Sputtering Preparation

Abstract

This study investigates the enhanced structural, and optoelectronic properties of transparent conductive Ga-doped Mg x Zn 1 -x O (GMZO) thin films with a varied magnesium (Mg) composition of 2% and 8%, respectively. The X-ray diffraction (XRD) measurements revealed that GMZO with an 8% Mg composition shows a stronger (002) diffraction intensity and narrower linewidth than that with a 2% Mg composition. Improved crystallinity and enlarged grain size in the postgrowth thermal annealed GMZO thin films were also observed in XRD and morphological measurements by atomic force microscopy. Photoluminescence measurements were conducted to investigate the improved GMZO thin-film quality, and the oxygen vacancy signal was found to decrease with increased Mg content, consistent with Xray photoelectron spectroscopy measurements. This study also shows high optical transmittance over 98%, and a low resistivity of 5.7 3 10 -4 ΩÁcm in Ga-doped Mg x Zn 1 -x O (x = 0.02) thin film, which indicates the highly promising candidate for use in optoelectronic devices.

Investigation of characteristics of ZnO:Ga nanocrystalline thin films with varying dopant content

“…ZnO also has a wide direct band gap (3.37 eV) and high exciton binding energy (60 meV) [3,4]. In addition to these features, zinc oxide TCO films exhibit easy doping characteristics and composite structures which help to improve optoelectronic properties [5]. The structural, optical and magnetic properties of ZnO, which are the most important factors for optoelectronic application, can be varied by doping with different elements [6].…”

Characteristics of Transparent Conducting W‐Doped SnO2 Thin Films Prepared by Using the Magnetron Sputtering Method

“…Transparent conducting oxide (TCO) films are of great importance for the optoelectronic devices such as solar cells, flat panel liquid crystal displays, and light emitting diodes . Recently, there is a considerable research interest in finding an alternative non‐ and reduced‐indium material system for the presently used Sn‐doped In 2 O 3 (ITO) because of the shortage of indium resource .…”

Study on Fabrication of ZnO Waveguide Layer for Love Wave Humidity Sensor Based on Magnetron Sputtering

“…Thus, these two methods are not suitable for the fabrication of high quality and the large number of devices. Although the fabrication of ZnO waveguide layer by magnetron sputtering technique is complicated and expensive, the ZnO waveguide layer fabricated by this method has the advantages of high quality and good c-axis orientation [ 25 ]. Moreover, this method is a planar fabrication technique with low material cost and good adhesion ability of the substrate, so it can satisfy the requirements of large scale and industrial production of devices.…”