Improved efficiency of GaAs-based VCSEL by utilizing fan-pad metallization and trench patterning

Alias, Mohd Sharizal; Shaari, Sahbudin; Choudhury, Pankaj Kumar; Mitani, S. M.

doi:10.1134/s1054660x09210014

Cited by 7 publications

(4 citation statements)

References 14 publications

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“…Plasma-enhanced chemical vapor deposition method was used to prepare the SiO 2 films [26,27]. The film thickness was adjusted using the growth time.…”

Section: Sio 2 Film Fabricationmentioning

confidence: 99%

Design and Fabrication of Temperature-Compensated Film Bulk Acoustic Resonator Filter Based on the Stress Compensation Effect

Liu

Sun

et al. 2022

Coatings

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To ensure that the performance of filters matches the continuous development in communication frequency bands, the influence of temperature on filter performance must be considered during the fabrication of filters. In this study, a cavity-type temperature-compensated film bulk acoustic resonator (TC-FBAR) device was prepared with an SiO2 temperature filter between the bottom electrode and the piezoelectric layer. A one-dimensional Mason model of the TC-FBAR was established. An advanced design system, a high-frequency structure simulator, and COMSOL software were used to optimize the design of the TC-FBAR. After the optimization, the out-of-band rejection was improved by 10 dB. To address the compensation effect of the tensile and compressive stresses, a multilayer film was implemented for low-stress control and a reduction in stress to |P| ≤ 150 MPa, thereby improving the orientation of the piezoelectric film. Moreover, the influence of the thickness of the SiO2 temperature-compensated layers on the temperature-compensated characteristics was studied. When the SiO2 thickness was 50 nm, the temperature coefficient of frequency (TCF) was ±1 ppm/°C. The center frequency and 3 dB bandwidth of TC-FBAR were 2.492 GHz and 15.02 MHz, respectively, and the center insertion loss was −3.1 dB. Moreover, the out-of-band rejection was greater than 40 dBc, and TCF was 0.8 ppm/°C.

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“…Plasma-enhanced chemical vapor deposition method was used to prepare the SiO 2 films [26,27]. The film thickness was adjusted using the growth time.…”

Section: Sio 2 Film Fabricationmentioning

confidence: 99%

Design and Fabrication of Temperature-Compensated Film Bulk Acoustic Resonator Filter Based on the Stress Compensation Effect

Liu

Sun

et al. 2022

Coatings

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“…In general, 1-D PhCs can be formed using thin-films deposition at various growth temperatures to suit the material or process requirements. [117][118][119][120][121][122][123] As for the 2-D/3-D PhCs, it can be fabricated using EBL, photolithography, NIL, or direct laser writing, followed by various etching techniques to form the air holes or pillars of a layer. [124][125][126][127][128]…”

Section: Photonic Crystalsmentioning

confidence: 99%

Review of nanophotonics approaches using nanostructures and nanofabrication for III-nitrides ultraviolet-photonic devices

et al. 2018

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Group III-nitride semiconductor materials especially AlGaN are key-emerging candidates for the advancement of ultraviolet (UV) photonic devices. Numerous nanophotonics approaches using nanostructures (e.g., nanowires, nanorods, and quantum dots/disks) and nanofabrication (e.g., substrate patterning, photonic crystals, nanogratings, and surface-plasmons) have been demonstrated to address the material growth challenges and to enhance the device efficiencies of photonic devices operating at UV wavelengths. Here, we review the progress of nanophotonics implementations using nanostructured interfaces and nanofabrication approaches for the group III-nitride semiconductors to realize efficient UV-based photonic devices. The existing challenges of nanophotonics applications are presented. This review aims to provide analysis of state-of-the-art nanophotonic approaches in advancing the UV-photonic devices based on group III-nitride semiconductors. © The Authors. Published by SPIE under a Creative Commons Attribution 3.0 Unported License. Distribution or reproduction of this work in whole or in part requires full attribution of the original publication, including its DOI.

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“…Detail fabrication is only described for PhC VCSEL with trench patterning since fabrication steps for VCSEL sample of T1 and T2 has been reported previously [14]. The device fabrication started with the metallization of the bottom n-and the top ring p-ohmic contacts by evaporating AuGe/Ni/Au (40/20/150 nm) and Ti/Au (15/150 nm), respectively.…”

Section: B Device Fabricationmentioning

confidence: 99%

“…VCSEL with trench structure exhibits higher device efficiency and highly confined multimode spectra in comparison to square air post mesa in typical oxide VCSEL [14]. This is due to narrower mode confinement provided for such structure compared with a given square air post mesa VCSEL.…”

Section: Introductionmentioning

confidence: 99%

Single transverse mode photonic crystal VCSEL with trench patterning

Alias

Shaari

2010

International Conference on Photonics 2010

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Single transverse mode control is achieved for multimode GaAs-based VCSEL by utilizing photonic crystal design and etched trench structure. Theoretical analysis is initially performed for photonic crystal design with various lattice constant and air holes diameter. The fabricated photonic crystal VCSEL with etched trench structure exhibits single mode output power of 0.7 mW, threshold current of 3.5 mA, slope efficiency of 0.10 W/A, and continuous single mode output spectrum throughout a wide operating current range. Comparison of typical oxide VCSEL, trench oxide VCSEL, and photonic crystal oxide VCSEL employing trench structure is presented. By combining photonic crystal and trench structure, single transverse mode operation of photonic crystal VCSEL can be much more strictly controlled.

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Improved efficiency of GaAs-based VCSEL by utilizing fan-pad metallization and trench patterning

Cited by 7 publications

References 14 publications

Design and Fabrication of Temperature-Compensated Film Bulk Acoustic Resonator Filter Based on the Stress Compensation Effect

Design and Fabrication of Temperature-Compensated Film Bulk Acoustic Resonator Filter Based on the Stress Compensation Effect

Review of nanophotonics approaches using nanostructures and nanofabrication for III-nitrides ultraviolet-photonic devices

Single transverse mode photonic crystal VCSEL with trench patterning

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