Improved efficiency of graphene/Si Schottky junction solar cell based on back contact structure and DUV treatment

Suhail, Ahmed; Pan, G.; Jenkins, David; Islam, Kamrul

doi:10.1016/j.carbon.2017.12.053

Cited by 39 publications

(21 citation statements)

References 32 publications

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“…With a larger size of active area, the collection efficient of photogenerated charge carriers would be lower because of the low conductivity of the graphene layer. In order the improve the conductivity of the graphene layer, Suhail et al introduced with grid electrode to the conventional window-based device structure, 105 which could provide a low resistance contact to the graphene layer, and it might also help to improve the efficiency of carrier collection. So a ne metal electrode design should be adopted on the front to facilitate carrier collection through the entire device area.…”

Section: Conclusion Challenges and Prospectsmentioning

confidence: 99%

Graphene/Si Schottky solar cells: a review of recent advances and prospects

et al. 2019

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Section: Conclusion Challenges and Prospectsmentioning

confidence: 99%

Graphene/Si Schottky solar cells: a review of recent advances and prospects

et al. 2019

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“…This idea decreases the recombination of carriers at the back contact and increases the V OC . However, Suhail et al changed the structure of Gr/Si solar cells from top‐window one to back‐contact one . Since Gr contacted with Si substrate from the back, the texturing process could be conveniently applied at the front of Si substrate without affecting the recombination rate.…”

Section: Engineering Gr/si Solar Cellsmentioning

confidence: 99%

Progress of Graphene–Silicon Heterojunction Photovoltaic Devices

Huang

Cong

et al. 2018

Adv Materials Inter

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Solar cells fabricated with the most dominant material in industry, silicon (Si), developed rapidly in the recent years. Traditional Si solar cells require a complex process of fabricating junction. Thanks to its exotic electrical and optical properties, graphene (Gr) has attracted tremendous research interest in optoelectronic device applications, e.g., solar cells. The Gr/Si solar cell can be achieved by a simple room‐temperature transfer technique, which exhibits great potential application in photovoltaics. Currently, many researchers focus on the strategies to dope the Gr for the cell efficiency improvement, from 1.65% to 16.2%. Although great progress has been made, there are still some key issues to be solved on the way to the commercialization of Gr/Si solar cells. Here, the recent progress in the development of Gr/Si solar cells is comprehensively reviewed, and the road map of Gr/Si solar cell techniques in the future is discussed.

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“…The third generation of solar cells, which may contain graphene, and/or other 2D materials, is also based on thin film but is still in the research and development stage. Examples of the third generation of solar cells are dye-sensitized solar cells (DSSCs) [2], organic solar cells (OSCs), or plastic solar cells, Perovskite solar cells [3], plasmonic solar cells, quantum dot solar cells, Schottky junction graphene/ silicon solar cells [4][5][6][7][8][9], and graphene/other 2D materials hybrid solar cells.…”

Section: Introductionmentioning

confidence: 99%

“…The power conversion efficiency (PCE) for graphenebased solar cells rapidly passed from the initial value of ≈ 1.5 to ≈ 15% [4][5][6][7][8][9], by controlling the number of graphene layers, addition of antireflection film, use of modified graphene films and silicon columns forming the Schottky junction, removing of PMMA residues left in the graphene during its transfer process, as much as possible, and controlling of the graphene work function by the insertion of chemical doping. However, the large loss of the photogenerated due to the current that crosses the Schottky junction (I d ), and does not contribute to external current, was not considered.…”

Section: Introductionmentioning

confidence: 99%

n-Graphene/p-Silicon-based Schottky junction solar cell, with very high power conversion efficiency

Wirth-Lima¹,

Alves-Sousa

Bezerra-Fraga

2020

SN Appl. Sci.

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We are presenting a solar cell consisting of electron-doped graphene (n-G)/holes-doped silicon (p-Si) Schottky junction, which provides a very high power conversion efficiency (PCE). The high PCE of our solar cell is caused by its high Schottky barrier height, which gives a very low value for the saturated reverse current (I 0), and consequently, occurs a very low value of the current flowing through the forward-biased Schottky junction (value tending to zero). Therefore, as all photogenerated current goes to the external circuit, the solar cell PCE, we are presenting is very high, which exceeds the Shockley-Quiesser limit. It is noteworthy that the n-G/p-Si solar cells with resistance series R s = 17.52 Ω, and R s = 10.00 Ω presented PCE values ≈ 22.55%, and ≈ 39.51%, respectively. Since there is no current going through the Schottky junction, that n-G/p-Si solar cell operates similarly to an electrochemical generator. To get the characteristic parameters of our solar cell, we used an analytical/numerical methodology.

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Improved efficiency of graphene/Si Schottky junction solar cell based on back contact structure and DUV treatment

Cited by 39 publications

References 32 publications

Graphene/Si Schottky solar cells: a review of recent advances and prospects

Graphene/Si Schottky solar cells: a review of recent advances and prospects

Progress of Graphene–Silicon Heterojunction Photovoltaic Devices

n-Graphene/p-Silicon-based Schottky junction solar cell, with very high power conversion efficiency

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