Improved efficiency of InGaN/GaN-based multiple quantum well solar cells by reducing contact resistance

Song, Jun Hyuk; Oh, Joon Ho; Shim, Jae Phil; Min, Jung Hong; Lee, Dong-Seon; Seong, Tae Yeon

doi:10.1016/j.spmi.2012.05.002

Cited by 12 publications

(3 citation statements)

References 17 publications

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“…Their wide bandgaps make it possible to achieve photovoltaics in the ultraviolet wavelength range with much less energy loss compared with other materials used in similar spectral range [141,142]. However, it is still challenging to make high-efficiency red or near-infrared photovoltaics using InGaN with high In content [143][144][145]. This is probably because of the In segregation problem and poor material quality, which remains to be one of the main issues of InGaN materials and devices [146].…”

Section: 1optoelectronic Applicationsmentioning

confidence: 99%

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Group III-nitride nanowires

Bao

2017

Materials Science and Technology

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Group III-nitride nanowires have attracted a lot of research interest in the past decade. They contain both the intrinsic properties of III-nitride materials and some unique properties induced by the nanowire structures. This article reviews the growth methods to obtain III-nitride nanowires, and discusses the pros and cons of both top-down and bottom-up approaches, with detailed discussions on different epitaxy methods. The most widely used catalyst-induced epitaxy and extrinsic particle free epitaxy to grow III-nitride nanowires are compared. The properties of those nanowires make them promising candidates for a broad range of applications, including optoelectronic, electronic and electromechanical devices, which are also presented, with a focus on the current challenges and recent progresses.

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Section: 1optoelectronic Applicationsmentioning

confidence: 99%

“…141,142 However, it is still challenging to make high-efficiency red or near-infrared photovoltaics using InGaN with high In content. [143][144][145] This is probably because of the In segregation problem and poor material quality, which remains to be one of the main issues of InGaN materials and devices. 146…”

Section: Optoelectronic Applicationsmentioning

confidence: 99%

Group III-nitride nanowires

Bao

2017

Materials Science and Technology

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“…Transparent conducting oxides (TCOs) are of great importance for their applications in a wide variety of devices, such as flat panel display, smart window, and optoelectronic devices (i.e., LEDs, solar cells) [1][2][3]. In order to improve the performance of such devices, TCOs should have not only high optical transparency, but also high electrical conductivity.…”

Section: Introductionmentioning

confidence: 99%