Improved electrical and optical properties of ITO thin films by using electron beam irradiation and their application to UV-LED as highly transparent p-type electrodes

Jo, Young Je; Hong, Chan-Hwa; Kwak, Joon Seop

doi:10.1016/j.cap.2011.03.082

Cited by 29 publications

(14 citation statements)

References 13 publications

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“…This increase in the band gap may be due to an increase in the carrier concentration after gamma ray irradiation, resulting in the shifting of the absorption edge toward the UV range. This type of phenomena related to an increase in the band gap can be explained by the Burstein–Moss effect. − The optical band gap is defined as the minimum energy needed to excite an electron from the valence band (VB) to the conduction band (CB), and the Fermi level lies in between the CB and VB . As the samples are exposed to irradiation, the number of electrons in the VB and CB are changed due to the defects created, which implies the possibility of intermediate states.…”

Section: Resultsmentioning

confidence: 99%

Gamma Ray Irradiation Enhances the Linkage of Cotton Fabrics Coated with ZnO Nanoparticles

et al. 2020

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In this work, we aim to study zinc oxide (ZnO)-based functional materials over cotton fabrics and their effects after gamma ray exposure of 9 kGy. We found that the binding of the nanoparticles with cotton fabrics can be enhanced after irradiation. This could be due to the oxygen deficiency or defects created in the interface between ZnO and cotton fabrics after irradiation. Near-edge X-ray absorption fine structure and X-ray photoelectron spectroscopy (XPS) were used to detect the oxygen inadequacies generated in the interior and at the surface of the ZnO nanoparticles after gamma ray exposure. XPS results showed that the binding energy of Zn shifts by 2 eV at 1.5 kGy and by 4 eV at 9 kGy. This huge shift of about 4 eV is completely different from other works due to the reaction that takes place on the interface between ZnO nanostructures and cotton fabrics after gamma ray irradiation. Overall, this work suggests that after gamma ray irradiation, there is an enhanced level of binding between the coated functional nanoparticles and cotton fabrics, which can be advantageous for the textile industries.

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Section: Resultsmentioning

confidence: 99%

Gamma Ray Irradiation Enhances the Linkage of Cotton Fabrics Coated with ZnO Nanoparticles

et al. 2020

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“…When trying to get low resistivity ITO films, the doping of tin (Sn) atoms should be properly controlled. However, Sn is a double-edged sword: Sn liberates a free electron when Sn is substituted for indium (In), but it also acts as a neutral impurity scattering center and reduces the electrical conduction when combined with interstitial oxygen atoms [7] . In this connection, to produce ITO thin films various deposition techniques have been used such as spray pyrolysis [8] , sol-gel process [9] , magnetron sputtering [10] , electron beam evaporation [11,12] , and so on.…”

Section: Introductionmentioning

confidence: 99%

Effects of vacuum annealing and oxygen ion beam bombarding on the electrical and optical properties of ITO films deposited by E-beam evaporation

Pan

Hang

2012

SPIE Proceedings

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Tin doped indium oxide (ITO) transparent conductive thin films with composition of 10 wt% SnO 2 and 89.8 wt% In 2 O 3 have been deposited by electron beam evaporation technique on K9 glass substrates at room temperature. The post annealing processes are done in vacuum with different annealing temperature at 100, 200, 300 and 350 ℃ for 1 hour, respectively. The oxygen ion energy is 800 eV; oxygen ion beam bombarding time is 10,20,30,40 and 50min, respectively. The results show that conductivity of ITO thin films are improved by increasing annealing temperature. The resistivity of the ITO thin films decrease from 5.2×10 −3 Ω ·cm at room temperature to 1.3×10 −3 Ω ·cm(350 ℃). The transmittance values of all samples in the visible range have been increased. As the oxygen ion beam bombarding time increases the resistivity reduce from 5.2×10 −3 Ω ·cm to 9×10 −4 Ω ·cm, the transmittance value improve from 66% to 82% at 550nm. Finally, the vacuum annealing and oxygen ion beam bombarding are done simultaneously, at temperature of 350 ℃ for 1 hours, ion bombardment time for 40 min. The resistivity of obtained ITO thin film is 7×10 −4 Ω ·cm .The maximum transmittance value is above 89% in the visible wavelength region.

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“…Several kinds of transparent conductive layer such as metal nanowires [ 13 , 14 , 15 , 16 ], graphene [ 17 , 18 , 19 ], carbon nanotubes [ 20 , 21 ], and conductive polymers [ 22 , 23 , 24 ] have been reported to improve the current spreading of LEDs. For top-emitting LEDs, indium-tin-oxide (ITO) has been widely used to increase current spreading uniformity over the entire active region due to its high optical transmittance and excellent electrical conductivity [ 25 , 26 , 27 ]. In addition, thermal annealing process has been used to improve ohmic contact performance between ITO and p-GaN [ 28 , 29 ].…”

Section: Introductionmentioning

confidence: 99%

Improvement in Light Output of Ultraviolet Light-Emitting Diodes with Patterned Double-Layer ITO by Laser Direct Writing

et al. 2019

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A patterned double-layer indium-tin oxide (ITO), including the first unpatterned ITO layer serving as current spreading and the second patterned ITO layer serving as light extracting, was applied to obtain uniform current spreading and high light extraction efficiency (LEE) of GaN-based ultraviolet (UV) light-emitting diodes (LEDs). Periodic pinhole patterns were formed on the second ITO layer by laser direct writing to increase the LEE of UV LED. Effects of interval of pinhole patterns on optical and electrical properties of UV LED with patterned double-layer ITO were studied by numerical simulations and experimental investigations. Due to scattering out of waveguided light trapped inside the GaN film, LEE of UV LED with patterned double-layer ITO was improved as compared to UV LED with planar double-layer ITO. As interval of pinhole patterns decreased, the light output power (LOP) of UV LED with patterned double-layer ITO increased. In addition, UV LED with patterned double-layer ITO exhibited a slight degradation of current spreading as compared to the UV LED with a planar double-layer ITO. The forward voltage of UV LED with patterned double-layer ITO increased as the interval of pinhole patterns decreased.

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Improved electrical and optical properties of ITO thin films by using electron beam irradiation and their application to UV-LED as highly transparent p-type electrodes

Cited by 29 publications

References 13 publications

Gamma Ray Irradiation Enhances the Linkage of Cotton Fabrics Coated with ZnO Nanoparticles

Gamma Ray Irradiation Enhances the Linkage of Cotton Fabrics Coated with ZnO Nanoparticles

Effects of vacuum annealing and oxygen ion beam bombarding on the electrical and optical properties of ITO films deposited by E-beam evaporation

Improvement in Light Output of Ultraviolet Light-Emitting Diodes with Patterned Double-Layer ITO by Laser Direct Writing

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