2023
DOI: 10.1016/j.jeurceramsoc.2023.04.028
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Improved electrical and thermal properties of silicon oxycarbide/spodumene composites

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Cited by 5 publications
(3 citation statements)
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“…Continuous graphene length, including tortuosity ( L eq ) [ 57 ], the average distance between defects ( L D ) [ 55 ], and 3D-ordering of the graphene layers (Δ W 2 D −1 ) [ 53 ] are other less common parameters. These Raman parameters have started appearing in recent literature for SiOC-derived materials [ 20 , 58 , 59 , 60 , 61 ]. However, to the best of our knowledge, it is the first time that these parameters have been employed in SiOC-CD materials.…”
Section: Resultsmentioning
confidence: 99%
See 1 more Smart Citation
“…Continuous graphene length, including tortuosity ( L eq ) [ 57 ], the average distance between defects ( L D ) [ 55 ], and 3D-ordering of the graphene layers (Δ W 2 D −1 ) [ 53 ] are other less common parameters. These Raman parameters have started appearing in recent literature for SiOC-derived materials [ 20 , 58 , 59 , 60 , 61 ]. However, to the best of our knowledge, it is the first time that these parameters have been employed in SiOC-CD materials.…”
Section: Resultsmentioning
confidence: 99%
“…Figure 6 indicates the Raman spectra of (a) SiOC and (b) SiOC-DC materials, respectively, pyrolyzed at different temperatures. Following the same criteria employed in previous work [ 58 ], a single Lorentz fitting was performed over the Raman spectra, and the calculated derived parameters are shown in Table 3 . The values included in Table 3 are the position (cm −1 ), full width at half intensity ( W ) (cm −1 ) of the D, G, and 2D bands; L a (nm); L eq (nm); L D (nm); ∆ W 2 D −1 (cm); and the I 2 D / I G ratio.…”
Section: Resultsmentioning
confidence: 99%
“…SiOC thin films can be integrated into semiconductor devices and electronic components. 16 The controlled deposition process ensures uniformity, and the optimized hydrogen flow rate contributes to the film's structural and electrical properties. This makes the coating suitable for applications in microelectronics and semiconductor manufacturing.…”
Section: Introductionmentioning
confidence: 99%