Improved electrical characteristics high-k gated MOS devices with in-situ remote plasma treatment in atomic layer deposition

Improved performance of back-gate MoS2 transistors by NH3-plasma treating high-k gate dielectrics*

“…Obviously, after the NH 3 -plasma treatment, Q ox can be significantly reduced and the relevant V fb shifts positively. This is mainly attributed to the fact that the N atoms produced by NH 3 plasma can be incorporated into the oxide to form HfON [28] and AlON [29] with higher k eq , and also can repair oxygen vacancies in the oxide [30,31] to reduce the positive trap charges and shift V fb in the positive direction.…”

Double nitridation of crystalline ZrO2/Al2O3 buffer gate stack with high capacitance, low leakage and improved thermal stability

“…Furthermore, the dielectric constant (k ZrO 2 ) of crystalline ZrO 2 with nitrogen incorporation in the NZNA sample can be estimated about 32, assuming the k IL is identical to those of ZNA sample. Accordingly, the significant improvement in CET and k eff can be deduced from the double nitridation process, which enhance the dielectric constant of the Al 2 O 3 and ZrO 2 layers and restrain the formation of Al silicate as well [14,27,28]. In addition, the interfacial state density (D it ) at mid-gap are 5.22 × 10 12 , 3.77 × 10 12 , 2.35 × 10 11 , and 3.35 × 10 11 eV −1 cm −2 for the Z0, ZA, ZNA, and NZNA samples, respectively, as extracted from the high frequency C-V curves using the Terman method [29].…”

High- k gate dielectric GaAs MOS device with LaON as interlayer and NH 3 -plasma surface pretreatment

“…N atoms and NH radicals) are provided by the NH 3 plasma and supply of more N + ions (since the NH 3 plasma has lower ionization energy). [22] (a) NH that the NH 3 -plasma treatment can also effectively remove the interfacial As oxide. This is why the NH 3 -HfTiON/LaON sample has better interface quality and electrical properties than the N 2 -HfTiON/LaON sample.…”