Improved Electrical Characteristics of AlGaN/GaN High-Electron-Mobility Transistor with Al2O3/ZrO2 Stacked Gate Dielectrics

Huang, Chung-Ching; Mazumder, Soumen; Lin, Pu-Chou; Lee, Kuan-Wei; Wang, Yeong-Her

doi:10.3390/ma15196895

Cited by 6 publications

(2 citation statements)

References 31 publications

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“…Given the combined effects of dual surface treatment and the stack dielectric layer with gate annealing modulation, D it was significantly reduced up to one order of magnitude lower in the MOS-HEMT compared with that in the conventional HEMT. Table 1 presents the DC performance and high-frequency comparison of the different gate structure MOS-HEMTs, including the PGA modulated dual surface-treated Al 2 O 3 /SiO 2 stack layer MOS-HEMT [17,19,31,[48][49][50][51].…”

Section: Gate Leakage Mechanisms In the Algan/gan Hemtmentioning

confidence: 99%

Remarkable Reduction in IG with an Explicit Investigation of the Leakage Conduction Mechanisms in a Dual Surface-Modified Al2O3/SiO2 Stack Layer AlGaN/GaN MOS-HEMT

et al. 2022

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We demonstrated the performance of an Al2O3/SiO2 stack layer AlGaN/GaN metal–oxide semiconductor (MOS) high-electron-mobility transistor (HEMT) combined with a dual surface treatment that used tetramethylammonium hydroxide (TMAH) and hydrochloric acid (HCl) with post-gate annealing (PGA) modulation at 400 °C for 10 min. A remarkable reduction in the reverse gate leakage current (IG) up to 1.5×10−12 A/mm (@ VG = −12 V) was observed in the stack layer MOS-HEMT due to the combined treatment. The performance of the dual surface-treated MOS–HEMT was significantly improved, particularly in terms of hysteresis, gate leakage, and subthreshold characteristics, with optimized gate annealing treatment. In addition, an organized gate leakage conduction mechanism in the AlGaN/GaN MOS–HEMT with the Al2O3/SiO2 stack gate dielectric layer was investigated before and after gate annealing treatment and compared with the conventional Schottky gate. The conduction mechanism in the reverse gate bias was Poole–Frankel emission for the Schottky-gate HEMT and the MOS–HEMT before annealing. The dominant conduction mechanism was ohmic/Poole-Frankel at low/medium forward bias. Meanwhile, gate leakage was governed by the hopping conduction mechanism in the MOS–HEMT without gate annealing modulation at a higher forward bias. After post-gate annealing (PGA) treatment, however, the leakage conduction mechanism was dominated by trap-assisted tunneling at the low to medium forward bias region and by Fowler–Nordheim tunneling at the higher forward bias region. Moreover, a decent product of maximum oscillation frequency and gate length (fmax × LG) was found to reach 27.16 GHz∙µm for the stack layer MOS–HEMT with PGA modulation. The dual surface-treated Al2O3/SiO2 stack layer MOS–HEMT with PGA modulation exhibited decent performance with an IDMAX of 720 mA/mm, a peak extrinsic transconductance (GMMAX) of 120 mS/mm, a threshold voltage (VTH) of −4.8 V, a higher ION/IOFF ratio of approximately 1.2×109, a subthreshold swing of 82 mV/dec, and a cutoff frequency(ft)/maximum frequency of (fmax) of 7.5/13.58 GHz.

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Section: Gate Leakage Mechanisms In the Algan/gan Hemtmentioning

confidence: 99%

Remarkable Reduction in IG with an Explicit Investigation of the Leakage Conduction Mechanisms in a Dual Surface-Modified Al2O3/SiO2 Stack Layer AlGaN/GaN MOS-HEMT

et al. 2022

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“…The electrons injection from the channel to the surface states of the AlGaN/GaN heterostructure degrades the electrical properties of AlGaN/GaN HEMTs, such as the forward drain current (I DS ), leakage current, and breakdown voltage [20,21]. Several surface passivation methods for these surface states using SiO 2 , Si 3 N 4 , Sc 2 O 3 , and benzocyclobutene have been investigated [21][22][23][24][25][26]. The passivation enhances the DC characteristics and reduces the RF dispersion of AlGaN/GaN HEMTs.…”

Section: Introductionmentioning

confidence: 99%

Correlation of Crystal Defects with Device Performance of AlGaN/GaN High-Electron-Mobility Transistors Fabricated on Silicon and Sapphire Substrates

Pharkphoumy

Janardhanam

Jang³

et al. 2023

Electronics

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Herein, the performance of AlGaN/GaN high-electron-mobility transistor (HEMT) devices fabricated on Si and sapphire substrates is investigated. The drain current of the AlGaN/GaN HEMT fabricated on sapphire and Si substrates improved from 155 and 150 mA/mm to 290 and 232 mA/mm, respectively, at VGS = 0 V after SiO2 passivation. This could be owing to the improvement in the two-dimensional electron gas charge and reduction in electron injection into the surface traps. The SiO2 passivation resulted in the augmentation of breakdown voltage from 245 and 415 V to 400 and 425 V for the AlGaN/GaN HEMTs fabricated on Si and sapphire substrates, respectively, implying the effectiveness of SiO2 passivation. The lower transconductance of the AlGaN/GaN HEMT fabricated on the Si substrate can be ascribed to the higher self-heating effect in Si. The X-ray rocking curve measurements demonstrated that the AlGaN/GaN heterostructures grown on sapphire exhibited a full-width half maximum of 368 arcsec against 703 arcsec for the one grown on Si substrate, implying a better crystalline quality of the AlGaN/GaN heterostructure grown on sapphire. The AlGaN/GaN HEMT fabricated on the sapphire substrate exhibited better performance characteristics than that on the Si substrate, owing to the high crystalline quality and improved surface.

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Ti₃C₂T_x MXene van der Waals Gate Contact for GaN High Electron Mobility Transistors

Wang

Tyagi

et al. 2023

Advanced Materials

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Gate controllability is a key factor that determines the performance of GaN high electron mobility transistors (HEMTs). However, at the traditional metal‐GaN interface, direct chemical interaction between metal and GaN can result in fixed charges and traps, which can significantly deteriorate the gate controllability. In this study, Ti3C2Tx MXene films are integrated into GaN HEMTs as the gate contact, wherein van der Waals heterojunctions are formed between MXene films and GaN without direct chemical bonding. The GaN HEMTs with enhanced gate controllability exhibit an extremely low off‐state current (IOFF) of 10−7 mA mm−1, a record high ION/IOFF current ratio of ≈1013 (which is six orders of magnitude higher than conventional Ni/Au contact), a high off‐state drain breakdown voltage of 1085 V, and a near‐ideal subthreshold swing of 61 mV dec−1. This work shows the great potential of MXene films as gate electrodes in wide‐bandgap semiconductor devices.

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Improved Electrical Characteristics of AlGaN/GaN High-Electron-Mobility Transistor with Al2O3/ZrO2 Stacked Gate Dielectrics

Cited by 6 publications

References 31 publications

Remarkable Reduction in IG with an Explicit Investigation of the Leakage Conduction Mechanisms in a Dual Surface-Modified Al2O3/SiO2 Stack Layer AlGaN/GaN MOS-HEMT

Remarkable Reduction in IG with an Explicit Investigation of the Leakage Conduction Mechanisms in a Dual Surface-Modified Al2O3/SiO2 Stack Layer AlGaN/GaN MOS-HEMT

Correlation of Crystal Defects with Device Performance of AlGaN/GaN High-Electron-Mobility Transistors Fabricated on Silicon and Sapphire Substrates

Ti₃C₂T_x MXene van der Waals Gate Contact for GaN High Electron Mobility Transistors

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Improved Electrical Characteristics of AlGaN/GaN High-Electron-Mobility Transistor with Al2O3/ZrO2 Stacked Gate Dielectrics

Cited by 6 publications

References 31 publications

Remarkable Reduction in IG with an Explicit Investigation of the Leakage Conduction Mechanisms in a Dual Surface-Modified Al2O3/SiO2 Stack Layer AlGaN/GaN MOS-HEMT

Remarkable Reduction in IG with an Explicit Investigation of the Leakage Conduction Mechanisms in a Dual Surface-Modified Al2O3/SiO2 Stack Layer AlGaN/GaN MOS-HEMT

Correlation of Crystal Defects with Device Performance of AlGaN/GaN High-Electron-Mobility Transistors Fabricated on Silicon and Sapphire Substrates

Ti3C2Tx MXene van der Waals Gate Contact for GaN High Electron Mobility Transistors

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Product

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About

Ti₃C₂T_x MXene van der Waals Gate Contact for GaN High Electron Mobility Transistors