Improved Electrical Contact Properties of MoS₂‐Graphene Lateral Heterostructure

Abstract

Abstract2D materials have been extensively investigated in view of their excellent electrical/optical properties, with particular attention directed at the fabrication of vertical or lateral heterostructures. Although such heterostructures exhibit unexpected or enhanced properties compared to those of singly used 2D materials, their fabrication is challenged by the difficulty of realizing spatial control and large area integration. Herein, MoS2 is grown on patterned graphene at variable temperatures, combining the concept of lateral heterostructure with chemical vapor deposition to realize large area growth with precise spatial control, and probe the spatial distribution of graphene and MoS2 by a number of instrumental techniques. The prepared MoS2‐graphene lateral heterostructure is employed to construct field effect transistors with graphene as the source/drain and MoS2 as the channel, and the performance of these transistors (on/off ratio ≈109, maximum field effect mobility = 8.5 cm2 V−1 s−1) is shown to exceed that of their MoS2‐only counterparts.

Recent Advances in 2D Lateral Heterostructures

“…Electronic devices based on lateral heterostructures, such as FETs [121][122][123], resonators [124], and logic circuits [125], which exhibit unique device properties, have been fabricated. In FET devices based on graphene/h-BN heterostructure film, the drain current, which is along and perpendicular to the heterostructure, has been measured, as shown in Fig.…”

“…d Transfer and transconductance (g m ) plots of graphene-MoS 2 FETs at V ds = 1 V. e Output plots of graphene-MoS 2 FETs at gate voltage ranging from 0 to 5 V. f Field-effect mobility of different MoS 2 FETs, including as-grown, transferred MoS 2 , and graphene-MoS 2 FETs. Reprinted with permission from Ref [121]…”

Structure, Preparation, and Applications of 2D Material‐Based Metal–Semiconductor Heterostructures

“…Other methods of growing graphene-TMDC lateral heterostructures have been developed, in which patterning is a critical step for the nucleation of the TMDCs. [29,[56][57][58] So far, whether covalent bonds are formed between graphene and the TMDC is still unclear. Note that monolayer TMDC consists of three atom layers, in which the metal atom layer is sandwiched between two layers of chalcogens atoms, while the graphene is composed of only one layer of carbon atoms.…”

Two‐dimensional heterostructure promoted infrared photodetection devices

“…In addition to mechanically exfoliated nanosheets, materials prepared with chemical vapor deposition (CVD) can also be manually stacked . Many heterostructures have been produced, such as MoS 2 /WS 2 , graphene/MoS 2 , MoSe 2 /graphene, and MoS 2 /WSe 2 , for flexible IR photodetectors and image sensor arrays.…”