Improved Electrical Stability of Zr-IGZO Thin-Film Transistors with Zr&lt;sub&gt;0.85&lt;/sub&gt;Si&lt;sub&gt;0.15&lt;/sub&gt;O&lt;sub&gt;2&lt;/sub&gt; Gate Dielectric

Zhuang, Zhi-Kai; Wang, Shui-Jinn; Wang, Sheng Yi; Chen, Hsiang Yi; Liao, Chun Kai; Hsiao, Sheng Tsang; You, Bing Cheng; Ko, Rong-Ming

doi:10.7567/ssdm.2018.ps-10-04

Extended Abstracts of the 2018 International Conference on Solid State Devices and Materials 2018

DOI: 10.7567/ssdm.2018.ps-10-04

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Improved Electrical Stability of Zr-IGZO Thin-Film Transistors with Zr0.85Si0.15O2 Gate Dielectric

Zhi-Kai Zhuang¹,

Shui-Jinn Wang²,

Sheng Yi Wang

et al.

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Improved Electrical Stability of Zr-IGZO Thin-Film Transistors with Zr<sub>0.85</sub>Si<sub>0.15</sub>O<sub>2</sub> Gate Dielectric

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