Improved External Base Resistance Extraction for Submicrometer InP/InGaAs DHBT Models

Johansen, Tom K.; Krozer, Viktor; Nodjiadjim, Virginie; Konczykowska, A.; Dupuy, J.-Y.; Riet, M.

doi:10.1109/ted.2011.2160067

Cited by 16 publications

(18 citation statements)

References 14 publications

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“…The small signal model is not only the basis of the large signal model but also an important support means to guide structure optimization and process improvement. Small signal models that can be used for InP HBT/DHBT modeling have been extensively reported [4,5,6,7,8,9,10,11] and mainly verified below 100 GHz, with a few reported results reaching 200 GHz. [5] Considering that the characteristic frequency of the InP DHBT device has been approaching the THz range, few studies have verified the small signal model for an InP DHBT device beyond 100 GHz and the model parameter extraction technology.…”

Section: Introductionmentioning

confidence: 99%

Extraction and verification of the small-signal model for InP DHBTs in the 0.2–325 GHz frequency range

Zhou

Sun

Liu

et al. 2018

IEICE Electron. Express

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This study presents the extraction and verification of a smallsignal model suitable for characterizing THz InP double heterojunction bipolar transistors (DHBTs). The π-type topology is adopted in the intrinsic model. Capacitances C cx and C ce are used to characterize the capacitive parasitics caused by the routing line connecting the collector terminal, base terminal and emitter terminal, respectively. The inductive parasitics introduced by the routing line are also considered. The initial values of the model parameters are extracted using a direct extraction method. The model and extraction method for the model parameters are verified by adopting an InP DHBT with 1 emitter finger and an emitter size of 0.5 µm × 5 µm. The simulation results correspond with the measured results in the frequency range from 200 MHz to 325 GHz.

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Section: Introductionmentioning

confidence: 99%

Extraction and verification of the small-signal model for InP DHBTs in the 0.2–325 GHz frequency range

Zhou

Sun

Liu

et al. 2018

IEICE Electron. Express

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“…To overcome the complications using the open-collector method for extraction of the extrinsic base resistance an alternative approach based on two-port parameters measured in the forward-active mode was recently developed [7]. The method exploits the physical behavior of the base-collector capacitance found in III-V based HBTs [3]:…”

Section: ) Extrinsic Base Resistance Extractionmentioning

confidence: 99%

Small- and large-signal modeling of InP HBTs in transferred-substrate technology

Johansen

Rudolph

Jensen

et al. 2014

Int. J. Microw. Wireless Technol.

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In this paper, the small-and large-signal modeling of InP heterojunction bipolar transistors (HBTs) in transferred substrate (TS) technology is investigated. The small-signal equivalent circuit parameters for TS-HBTs in two-terminal and threeterminal configurations are determined by employing a direct parameter extraction methodology dedicated to III-V based HBTs. It is shown that the modeling of measured S-parameters can be improved in the millimeter-wave frequency range by augmenting the small-signal model with a description of AC current crowding. The extracted elements of the small-signal model structure are employed as a starting point for the extraction of a large-signal model. The developed large-signal model for the TS-HBTs accurately predicts the DC over temperature and small-signal performance over bias as well as the largesignal performance at millimeter-wave frequencies.

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“…Relation (1) shows that R Bx and R Bi are involved in the apparent base resistance (R B ) as [15,19]:…”

Section: Apparent Base Resistance (R B ) Decompositionmentioning

confidence: 99%

“…where R Bx is the extrinsic base resistance, X is the base-collector distribution factor between the apparent base resistance and C BC [15,19], and R Bi is the intrinsic base resistance. Note that R Bx is bias independent, whereas X and R Bi are not.…”

Section: Apparent Base Resistance (R B ) Decompositionmentioning

confidence: 99%

“…Decreasing the base resistance (R Bx and R Bi ) with higher doping level leads directly to the enhancement of the noise performance, but the benefit on f MAX is partially counterbalanced by the degradation of the transit time, here reflected in a degradation of f T . The relative weight of R Bx compared to R Bi in f MAX can be written with τ CB = R Bx C BC + R Bi C BCi [19]:…”

Section: Apparent Base Resistance (R B ) Decompositionmentioning

confidence: 99%

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Application of partially coherent modes for studying generation of a Gaussian partially coherent laser beam

Suvorov

2010

Quantum Electron.

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We describe a reliable technique to separate the different contributions to the apparent base resistance (R B = R Bx + X R Bi ) of silicon germanium carbon (SiGe:C) heterojunction bipolar transistors (HBTs). The extrinsic base resistance (R Bx ) is quantified using small-signal measurements. The base-collector junction distribution factor (X) and the intrinsic base resistance (R Bi ) are extracted from high frequency noise (MWN) measurements. This method is applied to five different SiGe:C HBTs varying in base doping level and germanium content. The results show that high doping levels improve high frequency noise performances while germanium gradient helps to maintain outstanding dynamic performances. This method could be used to elucidate the base technological configuration that ensures low noise together with remarkable dynamic performances in state-of-the-art SiGe:C HBTs.

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Improved External Base Resistance Extraction for Submicrometer InP/InGaAs DHBT Models

Cited by 16 publications

References 14 publications

Extraction and verification of the small-signal model for InP DHBTs in the 0.2–325 GHz frequency range

Extraction and verification of the small-signal model for InP DHBTs in the 0.2–325 GHz frequency range

Small- and large-signal modeling of InP HBTs in transferred-substrate technology

Application of partially coherent modes for studying generation of a Gaussian partially coherent laser beam

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