Potassium and cerium co-doped Bi 4 Ti 2.86 W 0.14 O 12 ceramics with a formula of (K 0.5 Ce 0.5 ) x Bi 4−x Ti 2.86 W 0.14 O 12 (abbreviated as KC 100x -BITW, x = 0, 0.02, 0.04, 0.06, 0.08, 0.1) were prepared by a conventional solid-state reaction method. The effect of (K 0.5 Ce 0.5 ) complex doping amount on the structure, dielectric, and piezoelectric properties of the KC 100x -BITW ceramics was investigated. X-ray diffraction results indicated that the KC 100x -BITW ceramics are Aurivillius-type phase with the bismuth layer structure. (K 0.5 Ce 0.5 ) complex addition first increases and then decreases the grain size which can be observed by scanning electron microscopy. With the increase of (K 0.5 Ce 0.5 ) complex doping amount, the Curie temperature (T C ) was slightly decreased from 632 to 608 o C. The dielectric and piezoelectric properties were optimized in KC 100x -BITW ceramics with x = 0.08 as follows: d 33 = 24 pC/N, k p = 8.2%, Q m = 6766, e r = 135 (@100 kHz), tanδ = 0.28% (@100 kHz), T c = 611 o C, and resistivity ρ = 2.9 × 10 6 Ω cm at 500 o C, indicating that the KC 100x -BITW ceramics are suitable for high-temperature piezoelectric sensing applications.