Improved free-standing GaN Schottky diode characteristics using chemical mechanical polishing

Structural and chemical characteristics of atomically smooth GaN surfaces prepared by abrasive-free polishing with Pt catalyst

“…One candidate method of producing smooth surfaces is chemical mechanical polishing (CMP) with colloidal silica slurry [5][6][7][8][9][10][11][12]. However, little is known of the type of damage induced by CMP on GaN surfaces and only a few reports [9,11] exist on CMP processes that can achieve atomically smooth GaN surfaces with atomic steps required for subsequent epitaxial growth.…”

Nearly Ideal Current–Voltage Characteristics of Schottky Barrier Diodes Formed on Hydride-Vapor-Phase-Epitaxy-Grown GaN Free-Standing Substrates

“…There are a few reports on Schottky barrier diodes directly fabricated on GaN free-standing substrates with reduced defect density. [16][17][18][19] However, these reports mainly focused on the feasibility of free-standing GaN for power rectifiers, i.e., the main discussion points were on-resistances and breakdown voltages. These diodes still suffered from large reverse leakage.…”

Improved Optical and Electrical Characteristics of Free-Standing GaN Substrates by Chemical Polishing Utilizing Photo-Electrochemical Method

“…It has been reported that Schottky barrier properties were also improved by CMP. 16 However, the postpolishing cleaning is necessary after CMP due to the use of fine particles. These results suggest that the new polishing method has significant advantages for preparing GaN substrate surfaces for electronic and optoelectronic device applications.…”