Improved Gate Stability of Metal–Insulator–Semiconductor-High-Electron-Mobility Transistors with 10 nm Atomic Layer Deposition Al₂O₃ by Tetramethylammonium Hydroxide Wet Treatment

Abstract

We investigated the impact of predeposition surface treatment with a tetramethylammonium hydroxide (TMAH) solution on the performance of recessed gate metal−insulator−semiconductorhigh-electron-mobility transistors (MIS-HEMTs). When applying the forward step stress, gate leakage current of the TMAH-treated device becomes 1 order of magnitude smaller. Step stress tests carried out at various voltages showed a stable threshold voltage with both the reverse gate bias step stress and the off-state drain step stress contributing to the high-quality Al 2 O 3 /AlGaN interfaces. When the temperature was increased to 473 K, the maximum field effective mobility (μ FE ) was improved from 450 to 483 cm 2 /V•s, and on-resistance was improved by ∼6.8%.