Improved High Efficiency Stacked Microstructured Neutron Detectors Backfilled With Nanoparticle $^{6}$LiF

Bellinger, Steven L.; Fronk, Ryan G.; McNeil, Walter J.; Sobering, Timothy J.; McGregor, Douglas S.

doi:10.1109/tns.2011.2175749

Cited by 42 publications

(39 citation statements)

References 22 publications

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“…Wet etching results reported by the authors and their colleagues show significant improvement over dry etch methods with aspect ratios greater than 1:23 [59,61,62]. The method allows for straightforward batch processing at low cost, with etch rates exceeding 1.5 µm per minute in Si.…”

Section: Wet Etchingmentioning

confidence: 90%

“…MSND devices fabricated with 6 LiF backfilling can have features on the order of 10-30 µm and yield good efficiency. As a result, processing damage has less effect on the spectra [62,63].…”

Section: Shown Inmentioning

confidence: 99%

“…An alternative method for making the microstructured semiconductor neutron detectors requires diffusing the pn junction inside the trench structure [42,51,53,57,60,62,63]. The diode contact geometry is no longer produced on the primary pre-etched surface, but conforms to the surface of the trench structure as shown in Fig.…”

Section: Diode Fabricationmentioning

confidence: 99%

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Present status of microstructured semiconductor neutron detectors

McGregor

Bellinger

Shultis

2013

Journal of Crystal Growth

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Semiconductor diode detectors coated with neutron reactive materials have been investigated as neutron detectors for many decades, and are fashioned mostly as planar diodes coated with boron-10 ( 10 B), lithium-6 fluoride ( 6 LiF) or gadolinium (Gd). Although effective, these detectors are limited in efficiency (the case for boron and LiF coatings) or in the ability to distinguish background radiations from neutron-induced interactions (the case for Gd coatings). Over the past decade, a renewed effort has been made to improve diode designs to achieve up to a tenfold increase in neutron detection efficiency over the simple planar diode designs. These new semiconductor neutron detectors are fashioned with a matrix of microstructured patterns etched deeply into the substrate and, subsequently, backfilled with neutron reactive materials. Intrinsic thermal-neutron detection efficiencies exceeding 40% have been achieved with devices no thicker than 1 mm while operating on less than 5 volts.

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Section: Wet Etchingmentioning

confidence: 90%

Section: Shown Inmentioning

confidence: 99%

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Present status of microstructured semiconductor neutron detectors

McGregor

Bellinger

Shultis

2013

Journal of Crystal Growth

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“…An understanding of current limits for building a high-efficiency, low-cost neutron detector using standard commercial methods was developed, and many in the science community are developing strategies to operate within, and overcome, those limits. Bellinger "Characteristics" 2010, Brickner 2010, Nikolić 2010, Raphaelian 2010, McElfresh 2011, Nikolić 2011, Bellinger 2012. When the 10 B(n,α) 7 Li reaction is used for neutron detection, the key is to capture as many of the α-particles, and as much of the initial particle energy, as possible.…”

Section: Mark Raphaelian 1a and Michael Mcelfresh Amentioning

confidence: 99%

Nevada National Security Site Site-Directed Research and Development FY 2014 Annual Report

Bender

2015

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“…The best efficiency obtained by perforated neutron detector filled by 6 Li was of 29% at 10 V [11]. Also for these structures it was possible to use back to back stacking, leading to a reported efficiency of 42% at 3 V reverse bias [8]. Using 3D technology a different approach was followed by the Lawrence Livermore National Laboratory (USA).…”

Section: Introductionmentioning

confidence: 99%

Semiconductor neutron detectors

Mendicino¹,

Betta²,

Boscardin³

et al. 2015

Proceedings of 24th International Workshop on Vertex Detectors — PoS(VERTEX2015)

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Semiconductor neutron detectors are attracting increasing interest in many application fields, due to the shortage and high cost of 3 He gas which represented for decades the most important solution to neutron detection. The most interesting devices consist of silicon sensors featuring high aspect-ratio cavities filled with neutron converter materials (typically based on 10 B or 6 Li). Very good results have so far been obtained by different research groups in Europe, but most of all in the USA, with efficiency values up to 50% using only a single detector layer. In this paper, the state of the art in semiconductor neutron detectors will be reviewed, with emphasis on silicon based devices. Moreover, recent results from the R&D activity carried out in the framework of the INFN HYDE (HYbrid DEtector for neutrons) Project will be reported, covering design and technological aspects, as well as simulation results relevant to a new pixel sensor structure, aimed at high detection efficiency while minimizing the process complexity.

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Improved High Efficiency Stacked Microstructured Neutron Detectors Backfilled With Nanoparticle $^{6}$LiF

Cited by 42 publications

References 22 publications

Present status of microstructured semiconductor neutron detectors

Present status of microstructured semiconductor neutron detectors

Nevada National Security Site Site-Directed Research and Development FY 2014 Annual Report

Semiconductor neutron detectors

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