1998
DOI: 10.1016/s0925-9635(98)00165-4
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Improved high-temperature stability of Si incorporated a-C:H films

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Cited by 83 publications
(36 citation statements)
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“…The disordering effect gives rise to either the shift of the G peak position for lower frequencies or its broadening [18,19]. Similar behaviour was found for DLC films alloyed with Ti and Si [4][5][6].…”
supporting
confidence: 66%
See 1 more Smart Citation
“…The disordering effect gives rise to either the shift of the G peak position for lower frequencies or its broadening [18,19]. Similar behaviour was found for DLC films alloyed with Ti and Si [4][5][6].…”
supporting
confidence: 66%
“…However, due to the peculiar structure of DLC, with C atoms aggregated in an amorphous phase with different hybridization states, the films can reach very high compressive residual stress that limit their extensive application [1][2][3]. In order to overcome this problem, DLC films have been doped with metallic elements [4][5][6].…”
Section: Introductionmentioning
confidence: 99%
“…The addition of Si stabilised the coating structure by forming more sp 3 bonded carbon, thus the graphitisation was delayed. Similar thermal stability was documented for conventional RF sputtered a-C 1-x Si x :H coating in another 4 research [7]. The graphitisation took place ~500°C for samples with silicon content less than 15%.…”
Section: Introductionsupporting
confidence: 77%
“…Published by Elsevier Ltd. All rights reserved. structural (sp 3 -sp 2 transition) and mechanical changes during thermal annealing [23][24][25]. Besides this structure stabilization, Si addition affects the film surface chemistry, in particular the surface energy [26], and consequently tribological characteristics [27,28].…”
Section: Introductionmentioning
confidence: 99%