Improved InAlAs/InGaAs HEMT characteristics by inserting an InAs layer into the InGaAs channel

Akazaki, Tatsushi; Arai, Kunihiro; Enoki, T.; Ishii, Y.

doi:10.1109/55.145073

Cited by 113 publications

(31 citation statements)

References 9 publications

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“…An I C of about 5 A and an R N of 16 ⍀ were obtained at V g ϭ0 V. The I C was almost completely suppressed at V g ϳϪ0.9 V and R N was increased to 1.46 M⍀ at V g ϭϪ1. 15 V. Note that no gate-leakage current was observed at V g ϭϪ1.15 V. These results show a remarkable improvement in controllability of both I C and R N via gate voltage, compared with the JOFET that used the MIS-type gate. This is because the interface between the gate electrode and the undoped InAlAs layer is free from the interface levels, while SiO 2 was used as the gate insulator in the MIStype gate with the interface levels at the SiO 2 /InAlAs interface.…”

Section: Ntt Basic Research Laboratories 3-1 Morinosato-wakamiya Atmentioning

confidence: 67%

“…The growth temperature for all layers was kept at about 300°C, since the critical thickness increases at lower growth temperatures. 14 Using the results from our previous reports, 15,16 we fixed the InAs quantum-well thickness at 4 nm and the insertion position ͑the distance between the InAlAs spacer layer and the InAs quantum well͒ at 2.5 nm. In this way, a 2DEG was confined in the inserted InAs layer.…”

Section: Ntt Basic Research Laboratories 3-1 Morinosato-wakamiya Atmentioning

confidence: 99%

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A Josephson field effect transistor using an InAs-inserted-channel In0.52Al0.48As/In0.53Ga0.47As inverted modulation-doped structure

Akazaki

Takayanagi

Nitta

et al. 1996

Applied Physics Letters

119

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A Josephson field effect transistor (JOFET) was coupled with a two-dimensional electron gas in a strained InAs quantum well inserted into an In0.52Al0.48As/In0.53Ga0.47As inverted modulation-doped structure. The characteristics of this JOFET are much improved over previous devices by using a high electron mobility transistor (HEMT)-type gate instead of the usual metal-insulator- semiconductor (MIS)-type gate. The superconducting critical current as well as the junction normal resistance are completely controlled via a gate voltage of about −1 V; this provides voltage gain over 1 for a JOFET.

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Section: Ntt Basic Research Laboratories 3-1 Morinosato-wakamiya Atmentioning

confidence: 67%

Section: Ntt Basic Research Laboratories 3-1 Morinosato-wakamiya Atmentioning

confidence: 99%

A Josephson field effect transistor using an InAs-inserted-channel In0.52Al0.48As/In0.53Ga0.47As inverted modulation-doped structure

Akazaki

Takayanagi

Nitta

et al. 1996

Applied Physics Letters

119

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“…This InGaAs/InAlAs heterostructure is lattice-matched with InP, which can be easily integrated with other devices for di erent application purposes. The inserted InAs well, under the critical thickness, can provide the higher electron mobility [6]. The g factor in this system can be expected to have contributions from all materials.…”

Section: Introductionmentioning

confidence: 98%

Electron g factor in a gated InGaAs channel with double InAs-inserted wells

Lin¹,

Nitta²,

Koga³

et al. 2004

Physica E: Low-dimensional Systems and Nanostructures

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“…The InAlAs ternary alloy, lattice matched to InP substrates is potentially of importance owing to its usefulness for the fabrication of optoelectronic [3,4] and high-speed electronic [5,6] devices. While the AlGaAs/GaAs material system has an abrupt hetero-interface, [7,8] the growth of InAlAs on InP substrates has been reported to be difficult.…”

Section: Introductionmentioning

confidence: 99%

Raman study of V/III flux ratio effect in InP/InAlAs/InP heterostructures grown by MOCVD

Sayari¹,

Yahyaoui²,

Oueslati³

et al. 2009

J Raman Spectroscopy

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Micro-Raman measurements have been carried out in order to study the V/III flux ratio effect in InP/InAlAs/InP heterostructures grown by metal-organic chemical vapor deposition (MOCVD). Photoluminescence (PL) studies in InP/InAlAs/InP heterostructures [1,2] show a strong dependence of the PL band linewidth on V/III molar ratio. In addition to the observation of the two-mode behavior and the disorder activated modes in InAlAs alloy, an analysis of Raman spectra shows a line shape broadening and wavenumber shift of Raman peaks for various V/III molar ratios, with minimum linewidth and lattice mismatch occurring at V/III = 50. Also, a strong dependence on the composition modulation of the AlAs-like longitudinal optic (LO AlAs−like ) phonon was observed due to clustering. Calculation of the in-plane strain shows that the lattice mismatch between the epilayer and the substrate is relatively insensitive to flux ratio variation within the range investigated. Therefore, the high arsenic overpressures used have an insignificant adverse effect on the quality of the hetero-interfaces.

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Improved InAlAs/InGaAs HEMT characteristics by inserting an InAs layer into the InGaAs channel

Cited by 113 publications

References 9 publications

A Josephson field effect transistor using an InAs-inserted-channel In0.52Al0.48As/In0.53Ga0.47As inverted modulation-doped structure

A Josephson field effect transistor using an InAs-inserted-channel In0.52Al0.48As/In0.53Ga0.47As inverted modulation-doped structure

Electron g factor in a gated InGaAs channel with double InAs-inserted wells

Raman study of V/III flux ratio effect in InP/InAlAs/InP heterostructures grown by MOCVD

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