2020
DOI: 10.1002/pip.3332
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Improved interfacial properties of electrodeposited Cu2ZnSn(S,Se)4 thin‐film solar cells by a facile post‐heat treatment process

Abstract: Cu 2 ZnSn(S,Se) 4 (CZTSSe) thin-film solar cells offer various advantages including excellent optical and electrical properties, nontoxic and earth-abundant raw materials, and a simple fabrication process. However, these devices suffer from a high deficit of the open-circuit voltage (V OC), mainly caused by interface recombination, which increases with increasing surface roughness. In this study, to achieve a high V OC and enhance the overall device performance, an additional heat treatment process was introdu… Show more

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Cited by 32 publications
(31 citation statements)
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“…These observations show that no elemental diffusion is observed at the interface of CZTS/CdS without HT, while Cu, Zn, and Cd tend to inter‐diffuse into their counterparts of CdS and CZTS after HT. Similar phenomena have also been observed in previous work, [ 37,40 ] supporting that HT induces an elemental inter‐diffusion process at the CZTS/CdS interface.…”
Section: Resultssupporting
confidence: 90%
“…These observations show that no elemental diffusion is observed at the interface of CZTS/CdS without HT, while Cu, Zn, and Cd tend to inter‐diffuse into their counterparts of CdS and CZTS after HT. Similar phenomena have also been observed in previous work, [ 37,40 ] supporting that HT induces an elemental inter‐diffusion process at the CZTS/CdS interface.…”
Section: Resultssupporting
confidence: 90%
“…The device with the In 2 S 3 layer exhibits a longer carrier lifetime over the entire V OC range, indicating suppressed non‐radiative recombination due to defect passivation and the formation of a uniform CdS layer. Information about the trap distribution can be obtained from the linear fitting of the τ r – V OC plot using the following Equation : [5] trueτr=Aexp[]eVOCkB1T0-1T …”
Section: Resultsmentioning
confidence: 99%
“…Electrical impedance spectroscopy (EIS) and TAS was performed in the dark using a potentiostat (ZENNIUM, ZAHNER). DLCP and C – V measurements were conducted using a parameter analyzer (model: 4200 A‐SCS, Keithley), as described in our previous report [5] …”
Section: Methodsmentioning
confidence: 99%
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“…When the ratios of Sn 4+ to Sn 2+ was 1:0 and 0:1, the average roughness was 91.46 and 99.26 nm. According to the literature, [ 30,33–37 ] the rough CZTSSe films have a comparatively high number of defects in the heterojunction region, which acts as an interfacial recombination center. The smaller roughness indicates the better film surface quality of absorption layer, which is beneficial for the growth of the much better and more uniform CdS film with the same chemical bath deposition (CBD) process, showing superior heterojunction quality.…”
Section: Resultsmentioning
confidence: 99%