Improved interfacial properties of SiO2 grown on 6H-SiC in diluted NO

Lai, P.T.; Xu, Jing-Ping; Li, C.X.; Chan, C.L.

doi:10.1007/s00339-004-2940-3

Cited by 4 publications

(10 citation statements)

References 15 publications

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“…Wet/N 2 sample and sample annealed in HNO 3 þ H 2 O vapor at 708C heating temperatures of HNO 3 solution exhibit breakdown at 1,000 s. On the other hand, sample annealed in HNO 3 þ H 2 O vapor at 908C of heating temperature of HNO 3 solution breakdown at 2,000 s. It is observed that the samples annealed in HNO 3 þ H 2 O vapor at 1108C of heating temperature of HNO 3 solution presents a V fb shift between 2.6 V to 4.4 with stress time of 1,000-3,000 s. This further confirms the passivation role of HNO 3 in forming strong Si ; N (Figure 6(b)) and N ; O (Figure 6(d)) bonds near/at the interface attributed by the nitrogen passivation (Lai et al, 2005(Lai et al, , 2002Xu et al, 2003). It is well reported (Jamet et al, 2001;Lai et al, 2005) that nitridation has two functions: 1 creating strong SivN bonds by replacing strained SiZO bonds and passivate Si dangling bonds; additionally 2 creating CZN bonds and removing carbon atoms or clusters which are accumulated during oxidation.…”

Section: Notes: (A) Normalized H + Intensity; (B) Normalized Cn -Intesupporting

confidence: 59%

“…Q eff which consist of mobile ions, fixed-oxide charges, NIT and interface traps (D it ) was calculated as follows (Lai et al, 2005):…”

Section: Resultsmentioning

confidence: 99%

“…The Wet/ N 2 sample exhibits the largest V fb value. The positive value indicates generation of acceptor-like interface traps and electron traps in the oxide (Lai et al, 2005). The value of V fb for each sample (Figure 2(b)) was extracted from C-V curves using flat-band capacitance (C fb ) value obtained from the following modified equation (Schroder, 2006;Lai et al, 2002) by replacing the dielectric constant of Si with that of SiC:…”

Section: Resultsmentioning

confidence: 99%

“…where T is the room temperature in K, N D is the substrate doping in cm 2 3 and t ox in cm. Q eff which consist of mobile ions, fixed-oxide charges, NIT and interface traps (D it ) was calculated as follows (Lai et al, 2005):…”

Section: Resultsmentioning

confidence: 99%

“…The reduced residual carbon atoms or clusters at the near/at the interface contribute to an improved SiO 2 /SiC interface with low interface-trap density (Lai et al, 2005). Therefore, the following explanations can be proposed for the samples annealed in HNO 3 þ H 2 O vapor at 1108C heating temperature of HNO 3 solution which is regarded as the optimal temperature for this study:…”

Section: Notes: (A) Normalized H + Intensity; (B) Normalized Cn -Intementioning

confidence: 99%

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Effects of wet-oxidized 4H-SiC annealed in HNO₃/H₂O vapour

Poobalan

Moon

Kim

et al. 2013

Microelectronics International

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Purpose -The high density of defects mainly attributed to the presence of silicon oxycarbides, residual C clusters, Si-and C-dangling bonds at or near the SiO 2 /SiC interface degrades the performance of metal-oxide-semiconductor (MOS) devices. In the effort of further improving the quality and enhancement of the SiC oxides thickness, post-oxidation annealed by a combination of nitric acid (HNO 3 ) and water (H 2 O) vapor technique on thermally grown wet-oxides is introduced in this work. The paper aims to discuss these issues. Design/methodology/approach -A new technique of post-oxidation annealing (POA) on wet-oxidized n-type 4H-SiC in a combination of HNO 3 and H 2 O vapor at various heating temperatures (708C, 908C and 1108C) of HNO 3 solution has been introduced in this work. Findings -It has been revealed that the samples annealed in HNO 3 þ H 2 O vapour ambient by various heating temperatures of HNO 3 solution; particularly at 1108C is able to produce oxide with lower interface-state density and higher breakdown voltage as compared to wet-oxidized sample annealed in N2 ambient. The substrate properties upon oxide removal show surface roughness reduces as the heating temperature of HNO 3 solution increases, which is mainly attributed due to the significant reduction of carbon content at the SiC/SiO 2 interface by CvN passivation and CO or CO 2 out-diffusion. Originality/value -Despite being as a strong oxidizing agent, vaporized HNO 3 can also be utilized as nitridation and hydrogen passivation agent in high temperature thermal oxidation ambient and these advantages were demonstrated in 4H-SiC.

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