Improved Light-extraction Efficiency of the AlGaInP-basedLight-emitting Diodes Fabricated Using a Chemical Wet Etch ofn-AlGaInP Layer

Seo, Jae‐Won; Oh, Hwa-Sub; Kwak, Joon Seop; Song, Hyun-Don; Park, KyungWook; Park, DukHyun; Ryu, S.O.

doi:10.3938/jkps.55.314

Cited by 3 publications

(2 citation statements)

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“…Wet etching process has been widely implemented in GaN based light-emitting diodes (LEDs) to enhance its light extraction efficiency [24][25][26][27]. Six-sided pyramid structures are typically obtained from the wet etching of N-polar GaN.…”

Section: Six-sided Pyramid Structurementioning

confidence: 99%

Surface antireflection properties of GaN nanostructures with various effective refractive index profiles

Han

Zhao

2014

Opt. Express

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GaN nanostructures with various effective refractive index profiles (Linear, Cubic, and Quintic functions) were numerically studied as broadband omnidirectional antireflection structures for concentrator photovoltaics by using three-dimensional finite difference time domain (3D-FDTD) method. Effective medium theory was used to design the surface structures corresponding to different refractive index profiles. Surface antireflection properties were calculated and analyzed for incident light with wavelength, polarization and angle dependences. The surface antireflection properties of GaN nanostructures based on six-sided pyramid with both uniform and non-uniform patterns were also investigated. Results indicate a significant dependence of the surface antireflection on the refractive index profiles of surface nanostructures as well as their pattern uniformity. The GaN nanostructures with linear refractive index profile show the best performance to be used as broadband omnidirectional antireflection structures.

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Section: Six-sided Pyramid Structurementioning

confidence: 99%

Surface antireflection properties of GaN nanostructures with various effective refractive index profiles

Han

Zhao

2014

Opt. Express

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“…High-brightness and reliable AlGaInP-based light-emitting diodes (LEDs) have attracted great interest for various applications such as displays, traffic signals, indoor/outdoor illuminations and general lighting [1,2]. Recently, the device performance has been significantly improved through progress in material growth, device/electrode designs and fabrication processing technologies [3][4][5][6][7]. In general, to obtain high optical output power, a large-sized single LED or an array of individual LED dies is employed.…”

Section: Introductionmentioning

confidence: 99%

Device characteristics and thermal analysis of AlGaInP-based red monolithic light-emitting diode arrays

Kim

Lee

2013

Semicond. Sci. Technol.

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We investigated the device characteristics of AlGaInP/GaInP multiple quantum wells monolithic light-emitting diode (LED) arrays operating at λ ∼ 630 nm, together with experimental and theoretical thermal analysis. The optical and electrical properties were experimentally measured. The junction temperature of a single LED with 300 × 300 μm 2 was experimentally determined by the electroluminescence emission peak shift method, which led to a thermal resistance of ∼47 K W −1 . As the number of LEDs in arrays was increased, the optical power output (P opt ) was also increased. For 1 × 4 and 2 × 2 LED arrays, the P opt was about 15 mW at 300 mA and it was maximized to ∼23 mW at 670 mA. From the measured light-current-voltage data, the detailed theoretical calculations on the thermal properties were carried out by a three-dimensional steady-state heat dissipation model using the measured heat source densities. The internal temperature profiles were obtained for different separation distances, array sizes and injection currents. The internal temperature was largely increased with the increase in array size and the decrease in the separation distance.

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Theoretical and experimental analysis of AlGaInP micro-LED array with square-circle anode

et al. 2014

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An array of 320 × 240 micro-light-emitting diodes (micro-LEDs) based on an AlGaInP epitaxial wafer and with a unit size of 100 µm×100 µm was designed and fabricated. The optimum width of the isolation groove between adjacent light-emitting units was determined based on a compromise between full isolation of each LED and maximization of the light emitting area, and was found to be 20 µm. The grooves were filled with a mixed Si granule-polyurethane composite medium, because this type of insulating material can reflect part of the emitted light from the sidewall to the window layer in each light-emitting unit, and could thus improve lighting output efficiency. The 10-µm-wide square-circle anode was designed to increase the light emitting area while simultaneously being simple to fabricate. The device current used was in the 0.42–1.06 mA range to guarantee internal quantum efficiency of more than 85%, with a corresponding voltage range of 2–2.3 V. The layered temperature distribution in a single unit was simulated under a drive voltage of 2.2 V, and the maximum device temperature was 341 K. The micro-opto-electro-mechanical systems (MOEMS) technology-based fabrication process, experimental images of the device and device test results are presented here.

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Improved Light-extraction Efficiency of the AlGaInP-basedLight-emitting Diodes Fabricated Using a Chemical Wet Etch ofn-AlGaInP Layer

Cited by 3 publications

References 0 publications

Surface antireflection properties of GaN nanostructures with various effective refractive index profiles

Surface antireflection properties of GaN nanostructures with various effective refractive index profiles

Device characteristics and thermal analysis of AlGaInP-based red monolithic light-emitting diode arrays

Theoretical and experimental analysis of AlGaInP micro-LED array with square-circle anode

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