Improved local field model for HgCdTe electron avalanche photodiode

Cheng, Yushun; Chen, Lu; Guo, Huijun; Lin, Chun; Li, He

doi:10.1016/j.infrared.2019.07.002

Cited by 14 publications

(4 citation statements)

References 21 publications

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“…By changing the Nregion thickness and carrier concentration of the device, the electric field distribution in the junction region of the device can be obtained under different device structures and material parameters, and then the dark current and gain characteristics of the device can ben obtained. For MW HgCdTe APDs, the detailed simulated results were reported in our research papers [17,18], and the main conclusive results as shown in figure 2 and figure 3. As the figure 2 shows, to balance the dark current and gain performance, it is determined that the thickness of Nregion of MW APD devices is about 3 μm, and the concentration of Nregion should be controlled below 5×10 14 cm -3 .…”

Section: Hgcdte Apds Designmentioning

confidence: 67%

“…In order to obtain the optimized HgCdTe APD device structure, the structural simulation model is designed [17,18]. The dark current components considered in the simulation for HgCdTe APD are generation-recombination current (including primary SRH, auger, and radiation), trap assisted tunneling current (TAT), band to band tunneling current (BBT) and avalanche current.…”

Section: Hgcdte Apds Designmentioning

confidence: 99%

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Developments and characterization of HgCdTe e-APDs at SITP

Guo

Yang

Shen

et al. 2023

Earth and Space: From Infrared to Terahertz (ESIT 2022)

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HgCdTe has been shown to be the first semiconductor exhibiting single-carrier multiplication in short-wavelength, medium-wavelength, long-wavelength avalanche photodiodes detectors for cut-off wavelengths from 1.3 µm to 11 µm corresponding to compositions xcd from 0.7 to 0.2, which has the remarkable characteristics of high gain, high bandwidth and almost no excess noise. These results have opened a new horizon in photon starved and high-speed applications, such as active imaging and free space optical communications. In this paper, we report the latest results at SITP of HgCdTe eFAPDs using LPE-grown absorption layers in the SW and MW wavelength bands. The gain of single element short-wavelength HgCdTe APD for 2.57 μm cut-off wavelength is about 100 at 25V reverse bias, and GNDCD is about 1.47×10- 7A/cm2 at gain of 100 at 130K. For MW HgCdTe APDs, increase the P region doping concentration will reduce the overall dark current density and eliminate sudden rise of dark current at large bias and high temperature, and lower Cd composition could be a trade-off way for GNDCD suppression. 50 μm pitch 128×128 array HgCdTe APDs for cut-off wavelengths 4.88 µm corresponding to compositions xcd 0.307 were fabricated, whose GNDCD is less than 1×10-7A/cm2 at 8V reverse bias, gain is over 1000 at 11V reverse bias. A 50 μm pitch 128×128 array HgCdTe APDs with xcd=0.29 was manufactured, whose gain reaches 1570 at 9.8V reverse bias, the average excess noise factor is 1.25 at average gain of 133, noise equivalent photon is about 12 at average gain of 113. By thinning the absorption region thickness, the response bandwidth of Hg0.79Cd0.31Te APD reaches 635MHz under 1V reverse bias. Moreover, the medium-wavelength focal plane of 320×256 array is demonstrated the imaging, and the low noise, high sensitivity and fast imaging characteristics of HgCdTe APDs under linear avalanche gain are verified.

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Section: Hgcdte Apds Designmentioning

confidence: 67%

Section: Hgcdte Apds Designmentioning

confidence: 99%

Developments and characterization of HgCdTe e-APDs at SITP

Guo

Yang

Shen

et al. 2023

Earth and Space: From Infrared to Terahertz (ESIT 2022)

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“…Another crucial characteristic of an avalanche photodiode is a gain. Here for calculating the gain we have used the equation 6 [ 19 ]: Where the Ilight denotes the final value of the photocurrent and Ilight (V=0.5) stands for the reference voltage at unamplified photocurrent and unity gain. Fig.…”

Section: Gainmentioning

confidence: 99%

Design and Simulation of a Novel Avalanche Photodiode Utilizing Field Effect Diode Structure

Sharafi,

Alaei-Sheini,

Soroosh

2024

Preprint

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This research introduces a novel avalanche photodiode that addresses certain issues in existing avalanche photodiodes. The proposed device combines a basic pin-photodiode and a field effect diode, along with a multiplication layer. Through simulations, it has exhibited favorable optical and electrical characteristics. These include a responsivity of 71.2 A/W, an efficiency of 73.5%, a detectivity of 2×1010 √(cm.Hz)/W, and a low noise equivalent power of 7×10–14 W/√Hz. The device demonstrates peak responsivity at a wavelength of approximately 450 nm, indicating its potential as an optical detector for visible light applications.

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“…The indices n and p denote electron and hole, respectively. In our model, as in other works (Qiu et al 2015;Li et al 2018;Cheng et al 2019), the impact ionization is expressed as the net generation rate, G ION . In this way we can introduce it directly to transport equations (Roosbroeck 1950;Kurata 1982) with other generation-recombination (GR) mechanisms including influence of thermal mechanisms (Shockley-Read-Hall (SRH), Auger, Radiative) as well as tunneling mechanisms due to band-to-band tunneling (BTB) and trap-assisted tunneling (TAT).…”

Section: Impact Ionization Modelmentioning

confidence: 99%

Numerical analysis of impact ionization in HOT HgCdTe avalanche photodiodes

2020

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Semiconductor avalanche photodiodes enable individual photons to be detected when the incident flux of light is very low. This is possible thanks to the use of the avalanche multiplication phenomenon. Consequently, the obtained gain of photocurrent is from a few to several million times. The avalanche multiplication effect in semiconductors is determined by the generation rate caused by impact ionization. This paper describes the results of research aimed at investigation of the impact ionization mechanism in HgCdTe photodiodes operating at 230 K and in the medium-wave infrared range. Numerical analyses were used for the study using a computer program in which the modeling and consideration of all the possible generation and recombination mechanisms were included.

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Improved local field model for HgCdTe electron avalanche photodiode

Cited by 14 publications

References 21 publications

Developments and characterization of HgCdTe e-APDs at SITP

Developments and characterization of HgCdTe e-APDs at SITP

Design and Simulation of a Novel Avalanche Photodiode Utilizing Field Effect Diode Structure

Numerical analysis of impact ionization in HOT HgCdTe avalanche photodiodes

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