Improved MOCVD growth of GaN on Si‐on‐porous‐silicon substrates

Ishikawa, Hiroyasu; Shimanaka, K.; Amir, M. Azfar bin M.; Hara, Yoritoshi; Nakanishi, M.

doi:10.1002/pssc.200983496

Cited by 14 publications

(4 citation statements)

References 11 publications

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“…Thus, it is highly probable that the sintering of the PS layer brings in this case much more flexibility to the system. This allows a more efficient stress/strain sharing between the epilayer and the thin regrown Si film and then a reduced stress/strain in the epilayer contrary to the GaN on Si . On the other hand, due to the reduced stiffness PS, the GaN/AlN/Si stack is more likely to bow.…”

Section: Resultsmentioning

confidence: 99%

A detailed study of AlN and GaN grown on silicon-on-porous silicon substrate

Gommé

Gautier

Portail³

et al. 2016

Phys. Status Solidi A

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Section: Resultsmentioning

confidence: 99%

A detailed study of AlN and GaN grown on silicon-on-porous silicon substrate

Gommé

Gautier

Portail³

et al. 2016

Phys. Status Solidi A

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“…While discussing the efficiency of the use of hybrid substrates instead of singlecrystalline ones, it should be noted that the known attempts at growth on hybrid substrates, including those with porous layers, have repeatedly shown the prospects of such an approach to the formation of the integrated A III B V /Si nano-heterostructures [45][46][47][48]. Structuring of the hybrid compliant substrate as well as the growth of nanoscale layers with nanocolumnar morphology propose some additional advantages for the integration.…”

Section: Discussionmentioning

confidence: 99%

Investigations of Nanoscale Columnar AlxGa1-xN/AlN Heterostructures Grown on Silicon Substrates with Different Modifications of the Surface

Seredin,

Kurilo,

Goloshchapov

et al. 2023

Photonics

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The growth of nanoscale columnar AlxGa1-xN/AlN heterostructures on the surface of silicon substrates using plasma-activated nitrogen molecular-beam epitaxy was investigated in this work. Silicon substrates include atomic-smooth cSi substrate, Si substrate with a transition layer of porous silicon porSi/cSi and a hybrid substrate involving a silicon carbide layer grown with matched substitution of the atoms on the surface of porous silicon SiC/porSi/cSi. A complex analysis performed using a set of structural and spectroscopic techniques demonstrated that the epitaxial growth of the nuclear AlN layer on all types of the substrates in a N-enriched environment resulted in the formation of AlxGa1-xN/AlN heterostructures with a Ga-polar surface, which was realized only on the SiC/porSi/cSi substrate. The layer of AlxGa1-xN on cSi and porSi/cSi substrates was in the state of disordered alloy with an excess of gallium atom content. It was shown that a great difference in the lattice parameters of a substrate–film pair resulted not only in the appearance of a number of various defects but also in a considerable effect on the chemical process of the formation of the alloys, in our case, the AlxGa1-xN alloy. It was shown that nanoscale columns of AlxGa1-xN formed on SiC/porSi/cSi substrate were inclined relative to the c-axis, which was connected with the features of the formation of a SiC layer by the matched substitution of the atoms on the porous Si substrate, resulting in the formation of the inclined (111) SiC facets at the boundary of the (111) Si surface and pores in Si. Optical studies of the grown samples demonstrated that the optical band-to-band transition for the AlxGa1-xN alloy with Eg = 3.99 eVB was observed only for the heterostructure grown on the SiC/porSi/cSi substrate. A qualitative model is proposed to explain the difference in the formation of AlxGa1-xN layers on the substrates of cSi, porSi/cSi and SiC/porSi/cSi. The results obtained in our work demonstrate the availability of using SiC/porSi/cSi substrates for the integration of silicon technology and that used for the synthesis of nanoscale columnar AlxGa1-xN heterostructures using plasma-activated molecular-beam epitaxy with a nitrogen source.

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“…As noted above, the growth of gallium nitride layers on porous silicon has been achieved previously in a number of works, including our own. Nitride films were grown at various temperatures on porous silicon substrates via gas-phase epitaxy from organometallic compounds [48,49], molecular beam epitaxy [12,16], as well as using an RF magnetron sputtering system [50].…”

Section: Discussionmentioning

confidence: 99%

MicroRaman Study of Nanostructured Ultra-Thin AlGaN/GaN Thin Films Grown on Hybrid Compliant SiC/Por-Si Substrates

et al. 2022

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In our study, for the first time we demonstrate the advantages of using a compliant hybrid substrate of porSi/SiC to grow high-quality ultra-thin nanostructured AlxGa1−xN/GaN heterostructures using molecular beam epitaxy with plasma-activated nitrogen. Comparison of our experimental results obtained by micro-Raman spectroscopy, deconvolution, and the fitting of the experimental Raman spectra and subsequent calculations with information from already established literature sources show that the use of such a hybrid SiC/porSi substrate has a number of undeniable advantages for the growth of ultra-thin AlxGa1−xN/GaN nanoheterostructures without requiring the use of thick AIIIN buffer layers. Direct growth on a hybrid compliant substrate of SiC/porSi leads to a substantial relaxation in the elastic stresses between the epitaxial film, porous silicon, and silicon carbide, which consequently affects the structural quality of the ultra-thin AlxGa1−xN/GaN epitaxial layers. The experimental and computational data obtained in our work are important for understanding the physics and technology of AlxGa1−xN/GaN nanoheterostructures and will contribute to their potential applications in optoelectronics.

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Improved MOCVD growth of GaN on Si‐on‐porous‐silicon substrates

Cited by 14 publications

References 11 publications

A detailed study of AlN and GaN grown on silicon-on-porous silicon substrate

A detailed study of AlN and GaN grown on silicon-on-porous silicon substrate

Investigations of Nanoscale Columnar AlxGa1-xN/AlN Heterostructures Grown on Silicon Substrates with Different Modifications of the Surface

MicroRaman Study of Nanostructured Ultra-Thin AlGaN/GaN Thin Films Grown on Hybrid Compliant SiC/Por-Si Substrates

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