Improved Model for Ionization-Induced Surface Recombination Current in p-n-p BJTs

Li, Lei; Chen, Xiao-Chi; Yuan, Jiugang; Li, Zehong; Wu, Yuzhou; Zhang, Jinping; Ren, Min; Zhang, Bo; Wu, Xiaoli; Pang, Yuanlong; Yang, Guixia

doi:10.1109/tns.2020.3004710

Cited by 17 publications

(10 citation statements)

References 24 publications

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“…The devices were manufactured using a commercial IC process by the State Key Laboratory of Analog Integrated Circuit, China, and are of high quality (with a large initial current gain of about 110 and a small initial base current of about 0.1 μA under V BE = −0.6 V). The layout and cross-section diagram can be found in refs –. This effect disappears for a dose rate of 10 mrad(Si)/s and above (Figure ).…”

Section: Introductionmentioning

confidence: 89%

“…In general, ionizing irradiation will cause significant damage to semiconductor devices because electrically active defects are induced in the materials and interfaces. For example, under total ionizing dose (TID) irradiation, the performance of Si electronic devices decays because positively charged oxygen vacancies of puckered configuration, E γ ′ centers, and amphoteric Si dangling bond, P b centers, are induced in SiO 2 and at the SiO 2 /Si interface, respectively. − The E γ ′ centers are generated because ionizing-irradiation-induced holes are captured by pre-existing neutral oxygen vacancies in SiO 2 . − The P b centers are produced because E γ ′ centers can crack nearby hydrogen molecular (H 2 ) residual from the passivation process and release protons, − which under positive bias can drift to the SiO 2 /Si interface , to depassivate pre-existing P b H and finally produce P b centers. − As illustrated by the orange quadruple angle stars in Figure , the accumulated P b centers (interface traps) act as recombination centers, , resulting in the growth of base current ( I B ) and the degradation of current gain of bipolar devices . As P b centers are continuously produced under ionizing irradiation, excess I B is expected to grow monotonously with the total dose.…”

Section: Introductionmentioning

confidence: 99%

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Observation and Origin of Anomalous Early Recovery of Base Currents in Low-Dose-Rate γ-Ray-Irradiated PNP Transistors

Zhang,

Yang,

Zhou

et al. 2023

ACS Appl. Electron. Mater.

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We observe an anomalous early recovery behavior of base currents in silicon PNP transistors irradiated by 60 Co γ-rays at a dose rate below 1 mrad(Si)/s, which, however, disappears for a higher dose rate. The physical origin of this effect is thoroughly investigated by combining methods of defect concentration measurement, first-principles calculation, and kinetic modeling. The concentrations of interface traps and oxide-trapped charges in these transistors are found to increase monotonically as the total dose increases. Meanwhile, first-principles calculations show that γ-induced concentrated carrier clusters in n-type Si can greatly promote the diffusion of nearby electrically active vacancy-oxygen (VO) defect complexes. Therefore, the observed anomalous behavior of base current is attributed to an irradiation-induced annealing of preexisting defects in Si at room temperature because moving VO can encounter interstitial oxygen atoms and transform into electrically inactive VO 2 . A kinetic model is derived for the observable base current by combining this mechanism with the ionization-induced buildup of defects in the SiO 2 −Si structure. It can uniformly describe the anomalous behavior at low dose rates and the normal behavior at high dose rates by considering the difference in the time of carrier action on the defect diffusion. Our work demonstrates that low-dose-rate γ irradiation is an effective method to realize defect engineering in semiconductors.

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Section: Introductionmentioning

confidence: 89%

Section: Introductionmentioning

confidence: 99%

Observation and Origin of Anomalous Early Recovery of Base Currents in Low-Dose-Rate γ-Ray-Irradiated PNP Transistors

Zhang,

Yang,

Zhou

et al. 2023

ACS Appl. Electron. Mater.

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“…The AS-MCTs used in this work have been fabricated with the commercial IGBT process [1], [3]. Several devices from the single diffusion lots have been irradiated by cobalt-60 source in the Institute of Nuclear Physics and Chemistry [13]. All pins of the samples were shorted and grounded during irradiation.…”

Section: B As-mct and γ-Ray Irradiationmentioning

confidence: 99%

“…Fig.13 indicates that I peak and ω are 3.2 kA and 9.5 MHz respectively for PDC switched by un-irradiated AS-MCT. The parasitic resistance (R) and inductance (L) of our test PDC can be calculated by (13) and (14) which are listed in Table I. For PDC in discharge stage, the on-state resistance of AS-MCT dominates R. The on-state resistance weakly depends on I D .…”

Section: B Modellingmentioning

confidence: 99%

“…The typical TID damages on MOS contain shifts of turn-on and turn-off voltages, degradation of subthreshold swing, and increase of off-state leakage current [12]. For Bipolar-Junction-Transistors (BJTs), the increase of base leakage current and degradation of dc current gain are the dominant damage effects [13], [14]. As a semiconduction with composite structure made of MOS and BJTs, MCTs are sensitive to TID damage.…”

Section: Introductionmentioning

confidence: 99%

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Ionization Damage Effects of Pulse Discharge Circuit Switched by Anode-Short MOS-Controlled Thyristor

Zhang

et al. 2020

IEEE J. Electron Devices Soc.

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The MOS-controlled Thyristor (MCT) has been characterized by MOS-gating, high current rise rate, and high blocking capabilities. The anode short MCT (AS-MCT) is distinguished from the conventional MCT by an anode-short structure, which forms an extracting path for the leakage current at the gate-ground and develops a normally-off characteristic. The AS-MCTs are ideal switches for pulse discharge application. As a composite structure made of metal-oxide-silicon and bipolar junction transistors, AS-MCT is susceptible to ionization damage. This work reports the experimental results for the degradation of zero-load (or short) pulse discharge circuit characteristics induced by the ionization damage of its AS-MCT switch following cobalt-60 γ-ray dose up to 9160 Gy(SiO2). The radiation-induced leakage current in AS-MCT accounts for the degradations of charging time and peak surging current of the pulse discharge circuit. These degradations show a "tick"-like dependence on the γ-ray dose which are recoverable after high dose exposures, thousands of Gy(SiO2). From device and circuit physics perspectives, the damages on pulse discharge circuit are modelled, and then, this paper proposes, the mechanism behind the characteristics degradation of pulse discharge circuit from the total ionization dose damage of AS-MCT switch.

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First principle studies on properties of silicon-vacancy related defects in amorphous silica

Chen²,

Hong-Yu³

et al. 2022

Journal of Non-Crystalline Solids

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Improved Model for Ionization-Induced Surface Recombination Current in p-n-p BJTs

Cited by 17 publications

References 24 publications

Observation and Origin of Anomalous Early Recovery of Base Currents in Low-Dose-Rate γ-Ray-Irradiated PNP Transistors

Observation and Origin of Anomalous Early Recovery of Base Currents in Low-Dose-Rate γ-Ray-Irradiated PNP Transistors

Ionization Damage Effects of Pulse Discharge Circuit Switched by Anode-Short MOS-Controlled Thyristor

First principle studies on properties of silicon-vacancy related defects in amorphous silica

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