Improved Modeling of High Injection Substrate Current in High Voltage Bipolar Transistors

Abstract

This paper examines parasitic PNP transistor current modelingin a high voltage bipolar transistor operating at high injection.We show that current parasitic PNP models are far from sufficient and propose a new model based on the epi-layer model of Mextram.The model is implemented in a development version of Mextram and demonstrated to fit well measured substrate current.