Improved nanoscale field effect diode

Abstract

To overcome the short channel effects of a regular field effect diode (FED), this paper proposes a novel nanoscale FED. The novel FED has a simple structure that can be fabricated by the standard CMOS process technology. Both regular and novel FEDs are simulated using TCAD tools as a semiconductor drift-diffusion solver. Simulation results show that the novel device can operate properly at nanoscale channel length. The I ON /I OFF ratio of the novel FED is several orders of magnitude higher than of the regular FED.

A novel Field Effect Photodiode to control the output photocurrent and fast optical switching

“…This paper proposes a novel device named Field Effect Photodiode (FEPD) to overcome the weakness of PIN-PD and accurate control of the output photocurrent either applying the regular PIN-PD as a fast optical switch that provides a desire ION/IOFF ratio for optical applications in the nanoscale regime. The proposed device combines a Metal Semiconductor Field Effect Transistor (MESFET) and a regular PIN-PD structure [12,13]. This paper introduces a novel device with a very simple structure and doping concentration that makes it suitable for fabrication by the standard process technology of the regular PIN photodiode and conventional MESFET structures despite two gates over the absorption region for the output current control [14,15].…”