2022
DOI: 10.1109/jphot.2021.3128055
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Improved Noise Performance of CMOS Poly Gate Single-Photon Avalanche Diodes

Abstract: The noise performance of three types of n + /p-well single-photon avalanche diodes (SPADs) fabricated in a standard 180 nm CMOS technology is studied. The SPADs had different poly gate configurations: no poly gate (SPAD_NG), a dummy floating poly gate (SPAD_DG), and a field poly gate connected to the n + cathode (SPAD_FG). The measurement results of dark count rate and afterpulsing showed that the SPAD_DG had better noise performance compared to the SPAD_NG. This is because the dummy poly gate pushed the shall… Show more

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Cited by 17 publications
(9 citation statements)
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References 33 publications
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“…Figure 11 shows the DCR map for the multi-time-gated array when the excess bias is 0.8 V. The median DCR of the array was determined to be ~37 kHz (i.e., pixel D1). This level of DCR is reasonable for SPADs designed in standard CMOS processes [18][19][20]. From Figure 11, it can also be seen that the measured array demonstrated one "hot-pixel" whose noise (123.6 kHz) is notably higher than the rest of the array (i.e., pixel A3).…”
Section: Dark Count Ratesupporting
confidence: 55%
“…Figure 11 shows the DCR map for the multi-time-gated array when the excess bias is 0.8 V. The median DCR of the array was determined to be ~37 kHz (i.e., pixel D1). This level of DCR is reasonable for SPADs designed in standard CMOS processes [18][19][20]. From Figure 11, it can also be seen that the measured array demonstrated one "hot-pixel" whose noise (123.6 kHz) is notably higher than the rest of the array (i.e., pixel A3).…”
Section: Dark Count Ratesupporting
confidence: 55%
“…When there is no light, the carriers from different mechanisms can become energetic in the high electric field, initiating impact ionizations and generating pulses that are indistinguishable from photon-induced output pulses. In modern CMOS technologies, SPADs’ DCR can have a large range from tens of Hertz to hundreds of kiloHertz [ 1 , 18 , 28 , 29 , 30 , 31 , 32 , 33 , 34 , 35 , 36 ]. The DCR can originate from various mechanisms, including band-to-band thermal generation, trap-assisted thermal generation, trap-assisted tunneling, and band-to-band tunneling.…”
Section: Spad Operational Principlesmentioning
confidence: 99%
“…The size of SPADs also plays an important role in PDP models as SPADs need guard rings to avoid premature edge breakdown (PEB), especially when the doping concentration is increasingly higher in advanced CMOS technologies [ 29 , 47 , 78 , 79 ]. With the guard rings around the active region, the doping concentration near the edge of the junction may decrease to a much smaller value.…”
Section: Pdp Modelsmentioning
confidence: 99%
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“…During the dead time, the SPAD cannot respond to other incident photons. SPADs with active quench and reset (AQR) circuit have a hold-off time between the quench and reset process to reduce the secondary dark counts, which is also called afterpulsing effect [9]. By varying the hold-off time, one can adjust the duration of the dead time.…”
Section: Introductionmentioning
confidence: 99%