2007 18th European Conference on Circuit Theory and Design 2007
DOI: 10.1109/ecctd.2007.4529708
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Improved Noise Wave Model of Microwave FETs based on Artificial Neural Networks

Abstract: An application of artificial neural networks for accuracy improving of the microwave FET transistor noise modeling is presented in this paper. The proposed model is based on a basic transistor noise wave model whose noise wave temperatures are assumed to be constant over the operating frequency range. An artificial neural network is included in the model in order to make values of the noise parameters obtained by the original wave model more accurate.

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“…ANNs have been previously applied for accuracy improving of microwave FET noise wave model Marinković et al, 2007). Namely, in , parameters of noise wave model, i.e., noise wave temperatures, are considered to be frequency dependent.…”
Section: Introductionmentioning
confidence: 99%
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“…ANNs have been previously applied for accuracy improving of microwave FET noise wave model Marinković et al, 2007). Namely, in , parameters of noise wave model, i.e., noise wave temperatures, are considered to be frequency dependent.…”
Section: Introductionmentioning
confidence: 99%
“…For new operating conditions it is necessary to develop the whole model from the beginning. In (Marinković et al, 2007) the accuracy of the noise wave model is improved by introducing an ANN aimed to correct the values of the noise parameters simulated by the noise wave model whose noise temperatures are assumed to be constant with frequency. This model is valid only for the considered operating conditions.…”
Section: Introductionmentioning
confidence: 99%