Improved Off-State Leakage Current and Cutoff Frequency for AlGaN/GaN HEMT by Using Silicon-on-Insulator

Abstract

An improvement in off-state leakage current and cutoff frequency for AlGaN/GaN high electron mobility transistors (HEMTs) is investigated. Raman spectroscopy confirmed the low stress of GaN heterostructure grown on a silicon-on-insulator (SOI) substrate. The HEMT devices on SOI substrate showed lower knee voltage (Vknee) and on-resistance (RON) compared to those on the high-resistive silicon (HR-Si) substrates by 20.8% and 30.4%, respectively. Off-state leakage current was reduced to 10-7 A/mm, and the cutoff frequency (f_t) was increased by 19.2% as compared to HR-Si substrate. Thus, the GaN/SOI technology is proven to be a potential technology for high-frequency communication applications.

Low contact resistance and high breakdown voltage of AlGaN/GaN HEMT grown on silicon using both AlN/GaN superlattice and Al0.07Ga0.93N back barrier layer

“…The performance of electronic devices has been continuously improved during the past decade by optimizing material growth with advanced technology. Therein, the Si substrate was popularly used to fabricate a variety of devices with regards to low-cost production [1,2]. However, the performance of devices using conventional Si technology has reached its limit because of physical limitations imposed on the substrate, such as operating at high temperatures, faster speeds, high power and frequency levels [3,4].…”