Improved oxidation resistance of Ru/Si capping layer for extreme ultraviolet lithography reflector

Abstract

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Deactivation of Ru Catalysts under Catalytic CO Oxidation by Formation of Bulk Ru Oxide Probed with Ambient Pressure XPS

“…AP-XPS was taken at Beamline 9.3.2 at the Advanced Light Source, Lawrence Berkeley National Lab . The experimental procedure for the polycrystalline Ru film (∼45 nm thick) , consisted of spectra acquisition of the “as-received” Ru film under UHV conditions (10 –8 Torr). CO was then introduced (80 mTorr) and spectra were acquired at 50, 100, 150, and 200 °C, followed by cooling and evacuating the chamber (ca.…”

Surface and interface characterization of Ru/C/Ru trilayer structure using grazing incidence X‐ray reflectivity and X‐ray fluorescence

“…The investigations on Ru-on-Si interfaces have shown the formation of interfacial layer at the interface during deposition. 14,31 In our case, the density of interfacial layer formed at Ru-on-Si interface is found to be higher than bulk SiO 2 which suggests that the interfacial layer is not native oxide of Si. It is However, angular width is higher for TE 1 mode ($0.004 ), and the resonance condition can be fulfilled in comparatively large thickness range.…”

“…It has been used as capping layers for extreme UV multilayer mirrors for lithographic applications. 14,15 It has also been used as a barrier layer in Mo/Si multilayers to improve reflectivity performance. 16,17 Ru has been used in multilayers in combination with Si as an analyser for polarization measurements 18 and with carbon and boron carbide as multilayer mirror in soft X-ray region 18 and as multilayer monochromators in hard X-ray region.…”