2024
DOI: 10.5829/ije.2024.37.06c.02
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Improved Performance Analysis and Design of Dual Metal Gate FinFET for Low Power Digital Applications

P. Padmaja,
D. Vemana Chary,
R. Erigela
et al.

Abstract: A High-K Dielectric Dual Metal Gate FinFET (DMG-FinFET) is proposed in this work to improve the drain current and electrical characteristics of the device. The proposed device employing dielectric materials such as Silicon dioxide, Hafnium oxide and Titanium oxide and investigated in 10 nm technology. The architecture represents a critical advancement in transistor design, addressing challenges posed by traditional high-K gate dielectric materials being HfO2 and TiO2. This work employs a comprehensive approach… Show more

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