Improved performance of a dual-passivated heterojunction bipolar transistor

Abstract

Articles you may be interested inStability study and effect of passivation on InP/InGaAs double heterojunction bipolar transistors Appl. Phys. Lett. 94, 063506 (2009); 10.1063/1.3075842 Two-dimensional analysis for emitter ledge thickness of In Ga P ∕ Ga As heterojunction bipolar transistors Appl. Phys. Lett. 90, 043510 (2007);Dual passivation ͑with ledge structure and sulfur treatment͒ on base surface is employed to improve device performance of an InGaP / GaAs heterojunction bipolar transistor ͑HBT͒. By using this dual-passivation technique, good transistor characteristics such as dc current gain ␤ F , offset voltage ⌬V CE , specific contact resistance C , and sheet resistance R sh are obtained. In addition, the InGaP / GaAs HBT with dual passivation exhibits improved thermal stability and microwave characteristics. Our experimental results suggest that the dual-passivated device can be used for high-temperature and/or low-power electronics applications.