Improved Performance of Ge Solar Cell Using Graphene Quantum Dots

Abstract

We investigated the effect of graphene quantum dots (GQDs) on performance of single-junction Ge solar cell grown on (100) substrate by low pressure metalorganic chemical vapor deposition (LP-MOCVD). Isobutylgermane (IBuGe) is used as a Ge precursor for the Ge solar cell growth. By employing GQDs, the power conversion efficiency of the Ge solar cell is improved up to 3.90% (Voc of 0.22 V, Jsc of 28.52 mA/cm2, and FF of 63.83%) through effective photon management as compared to bare Ge solar cells of 3.24% under AM 1.5G illumination.