Improved performance of mid-infrared superlattice light emitting diodes grown epitaxially on silicon

Muhowski, Aaron J.; Bogh, Cassandra; Heise, R.L.; Boggess, Thomas F.; Prineas, J. P.

doi:10.1016/j.jcrysgro.2018.10.047

Cited by 9 publications

(4 citation statements)

References 32 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…However, for higher currents (>1A), the Si-based LED demonstrated a significantly stronger output power despite the higher defect density. This can be attributed to the improved thermal conductivity of the Si wafer, as reported previously for an Sb-based superlattice LED grown on Si [24].…”

Section: Resultssupporting

confidence: 77%

Electroluminescence characterization of mid-infrared InAsSb/AlInAs multi-quantum well light emitting diodes heteroepitaxially integrated on GaAs and silicon wafers

Altayar

Al-Saymari

Repiso

et al. 2022

Journal of Crystal Growth

View full text Add to dashboard Cite

Section: Resultssupporting

confidence: 77%

Electroluminescence characterization of mid-infrared InAsSb/AlInAs multi-quantum well light emitting diodes heteroepitaxially integrated on GaAs and silicon wafers

Altayar

Al-Saymari

Repiso

et al. 2022

Journal of Crystal Growth

View full text Add to dashboard Cite

“…These techniques allowed the integration of III-Sb quantum cascade lasers on Si [13]. Superlattice (SL) light emitting diodes (LEDs) grown on Si have also been reported, exhibiting increased radiance compared with devices grown on GaSb as a result of improved thermal management [14]. Recently, we demonstrated a high-performance, MIR InAs/InAsSb SL photodetector on Si using an APD-free GaSb buffer layer.…”

Section: Introductionmentioning

confidence: 99%

Heteroepitaxial Integration of Mid-Infrared InAsSb Light Emitting Diodes on Silicon

et al. 2019

View full text Add to dashboard Cite

Silicon photonics has emerged as the most promising technology for nextgeneration compact optoelectronic systems, but further development is still required to achieve efficient and reliable on-chip light sources. Direct epitaxial growth of antimonidebased compound semiconductor materials on silicon provides a pathway toward the monolithic integration of new, mid-infrared solid-state light sources and comprehensive photonic circuits on silicon platforms. Such devices have wide-ranging applications in environmental monitoring and medical diagnostics. This paper reports on the realization of a mid-infrared InAsSb light emitting diode directly integrated onto silicon using molecular beam epitaxy. The heteroepitaxial integration of the InAsSb p-in device onto silicon was achieved with the use of a novel, antiphase domain-free, GaSb-on-silicon buffer layer. The device exhibited efficient light emission at room temperature, peaking at around 4.5 μm, which corresponds well to the CO 2 atmospheric absorption band. An output power of 6 μW and an external quantum efficiency of 0.011% was measured at 300 K. These results demonstrate midinfrared III-V light emitting diodes can be directly grown on silicon, which is an essential step towards the realization of the next generation, on-chip integrated light sources.

show abstract

“…Today, superlattice (SL) structures feature a wide variety of applications: light-emitting diodes, [1,2] high-electron-mobility transistors (HEMT), [3,4] and thermoelectric materials. [5,6] It is an important task to define thermal properties of materials, used in those structures.…”

Section: Introductionmentioning

confidence: 99%

Calculation of Thermal Conductivity of AlGaN/GaN Superlattices

Filatova-Zalewska

Litwicki

Jeżowski

2023

Physica Status Solidi (b)

View full text Add to dashboard Cite

Herein, the results of theoretical investigation of anisotropic thermal conductivity of AlGaN/GaN superlattices (SLs) are presented. For calculations, the Boltzmann transport equation in the relaxation time approximation is used. Results of computations are compared with experiment and theoretical result obtained using Callaway model. Good agreement between experimental and theoretical results is observed. Opportunity of use of the Callaway model for calculation of anisotropic thermal conductivity of SLs is discussed.

show abstract

Improved performance of mid-infrared superlattice light emitting diodes grown epitaxially on silicon

Cited by 9 publications

References 32 publications

Electroluminescence characterization of mid-infrared InAsSb/AlInAs multi-quantum well light emitting diodes heteroepitaxially integrated on GaAs and silicon wafers

Electroluminescence characterization of mid-infrared InAsSb/AlInAs multi-quantum well light emitting diodes heteroepitaxially integrated on GaAs and silicon wafers

Heteroepitaxial Integration of Mid-Infrared InAsSb Light Emitting Diodes on Silicon

Calculation of Thermal Conductivity of AlGaN/GaN Superlattices

Contact Info

Product

Resources

About