2018
DOI: 10.1002/admt.201700279
|View full text |Cite
|
Sign up to set email alerts
|

Improved Performance of Zinc Oxide Thin Film Transistor Pressure Sensors and a Demonstration of a Commercial Chip Compatibility with the New Force Sensing Technology

Abstract: A zinc oxide thin film transistor is developed and optimized that simultaneously functions as a transistor and a force sensor, thus allowing for scalable integration of sensors into arrays without the need for additional addressing elements. Through systematic material deposition, microscopy, and piezoelectric characterization, it is determined that an O2 rich deposition condition improves the transistor performance and pressure sensing characteristics. With these optimizations, a sensitivity of 4 nA kPa−1 and… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
3
2

Citation Types

0
37
0

Year Published

2019
2019
2024
2024

Publication Types

Select...
6
1

Relationship

1
6

Authors

Journals

citations
Cited by 49 publications
(37 citation statements)
references
References 20 publications
0
37
0
Order By: Relevance
“…F, Structure of the thin‐film transistor‐based pressure sensor and the constructed sensing array. Reproduced with permission from Reference 90, Copyright 2018, Wiley‐VCH. G, Pressure sensor assembled onto the wrist and breast for pulse detection and respiration monitoring.…”
Section: General Wearable Electronics and Wearable Photonicsmentioning
confidence: 99%
See 1 more Smart Citation
“…F, Structure of the thin‐film transistor‐based pressure sensor and the constructed sensing array. Reproduced with permission from Reference 90, Copyright 2018, Wiley‐VCH. G, Pressure sensor assembled onto the wrist and breast for pulse detection and respiration monitoring.…”
Section: General Wearable Electronics and Wearable Photonicsmentioning
confidence: 99%
“…It is considered as a new pressure sensing technique that enables the use of miniature sensing elements with high sensitivity and large‐area scalability in production. A zinc oxide thin‐film transistor functioning as both a transistor and a force sensor with the same device structure is presented in Figure 1F 90 . Furthermore, a sensor array with the force‐sensing transistors is fabricated without additional addressing elements.…”
Section: General Wearable Electronics and Wearable Photonicsmentioning
confidence: 99%
“…At the same time, aiming to figure out problems of safety issues and limited working time, wind‐driven TENG is employed to take place of maintaining power device as a power supply unit to manufacture self‐powered devices. Portable and wearable pressure sensors are of great concern for various daily applications, such as electronic skin, flexible touchscreens, medical devices and energy harvesting devices . Hitherto, the generally working mechanism of pressure sensor can be classified as force‐induced changes in piezoelectricity, triboelectricity, capacitance, and resistivity .…”
Section: Introductionmentioning
confidence: 99%
“…Conductive materials are an essential part of the sensor for constructing conductive pathways . Traditional conductive materials are mostly made of metal and semiconductor materials, although they are stable in performance, and widely used, the GF is only 2 and they have shortcoming of lacking softness . What's more, the nanomaterials have disadvantages of poor mechanical stability, especially after multiple folding or bending cycles.…”
Section: Introductionmentioning
confidence: 99%