2006
DOI: 10.1016/j.solmat.2005.05.015
|View full text |Cite
|
Sign up to set email alerts
|

Improved phosphorous gettering of multicrystalline silicon

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1

Citation Types

2
37
0

Year Published

2008
2008
2016
2016

Publication Types

Select...
8
2

Relationship

0
10

Authors

Journals

citations
Cited by 66 publications
(39 citation statements)
references
References 17 publications
2
37
0
Order By: Relevance
“…Improved P gettering using a low temperature annealing after phosphorus diffusion has been proposed in several publications. [11][12][13] This clearly indicates that iron precipitation, as directly proposed and demonstrated by Buonassisi et al, 13 is also important in P gettering. The problem is that the segregation coefficient of iron to phosphorus doped layer is not well known.…”
Section: Modeling Boron Diffusion Gettering Of Iron In Silicon Solar mentioning
confidence: 66%
“…Improved P gettering using a low temperature annealing after phosphorus diffusion has been proposed in several publications. [11][12][13] This clearly indicates that iron precipitation, as directly proposed and demonstrated by Buonassisi et al, 13 is also important in P gettering. The problem is that the segregation coefficient of iron to phosphorus doped layer is not well known.…”
Section: Modeling Boron Diffusion Gettering Of Iron In Silicon Solar mentioning
confidence: 66%
“…1 In the solar cell fabrication process, the detrimental impact of iron is commonly mitigated by the gettering of iron to the heavily phosphorus doped regions near the wafer surfaces, during the high temperature phosphorus diffusion process used for the p-n junction formation. [1][2][3][4][5] Heavy boron diffusion or aluminium alloying processes could also achieve similar gettering effects, if well integrated into the solar cell fabrication processes.…”
Section: Introductionmentioning
confidence: 99%
“…This hypothesis has been recently confirmed by Buonassisi et al [2] in cooling experiments with intentionally doped mc-Si. Furthermore, a slow cool down or low temperature annealing after phosphorous diffusion gettering ("extended gettering") has been shown to increase the electron lifetime in p-type mc-Si wafers to an extent much greater than a standard gettering step at constant temperature [3,4,5,6]. So far it has not been clear whether internal (relaxation) gettering or external (segregation) gettering is the dominant process during a slow cool down under the presence of the phosphorous gettering layer.…”
Section: Introductionmentioning
confidence: 99%