Improved photoelectrochemical performance of (Bi1−xSbx)2S3 photoanodes

Rajalakshmi, P; Oommen, Rachel; Sanjeeviraja, C.

doi:10.1016/j.tsf.2012.12.045

Cited by 13 publications

(9 citation statements)

References 24 publications

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“…Figure 8 shows the transmittance spectra for Sn/Bi ratios from 0.67 to 2.18 for a typical sample Sn-Bi-S system thin film that had been annealed at 400°C. The optical absorption coefficient 'a' was calculated using the equation a ¼ À ln T t [26] and was found to be [10 -4 cm -1 , which agrees well with previously reported values [27]. This high absorption coefficient suggests that the Sn-Bi-S system may indeed be suitable for the absorber layer in the TFPV devices.…”

Section: Optical Characterizationsupporting

confidence: 85%

Physical properties of chalcogenide Sn–Bi–S graded thin films annealed in argon

2015

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The development of cost-effective and nontoxic thin film materials is vital for fabrication of solar cells. We are presenting a combinatorial synthesis approach (CSA) for the deposition of chalcogenide Sn-Bi-S graded thin films by thermal evaporation. Post-deposition thermal annealing in the temperature range of 200-500°C in an argon atmosphere has been carried out for the Sn-Bi-S thin films. The effect of annealing treatment and initial composition on the structural properties of the Sn-Bi-S graded thin films was studied by using energy-dispersive X-ray spectroscopy, X-ray diffraction (XRD), and Raman spectroscopy. XRD measurements showed that the thin films were grown in polycrystalline structure. Different microstructural parameters such as crystallite size, dislocation density, and microstrain were estimated after postdeposition thermal treatment and found annealing temperature dependent. From the transmission spectra the estimated optical band gap energy values were found in the range 1.27-1.43 eV for the (Sn/Bi) molar ratio of 2.18-0.67 in a typical sample annealed at 400°C. Photoconductivity response was determined for incident light of wavelength 300-1100 nm and was observed to be annealing temperature and Sn/Bi molar ratio dependent. Photoconductivity was also noted to depend upon the Sn/Bi molar ratio with Sn-rich samples giving the strongest response. Sn-rich compositions also showed p-type conductivity over the temperature range of 350-400°C. These findings show that the CSA has potential for the screening of high-quality Sn-Bi-S thin films.

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Section: Optical Characterizationsupporting

confidence: 85%

Physical properties of chalcogenide Sn–Bi–S graded thin films annealed in argon

2015

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“…As is known, the orthorhombic structure (SG: Pnma ) of both Bi 2 S 3 and Sb 2 S 3 consist of the specific 1D ribbonlike [V 4 S 6 ] n (V = Bi, Sb) polymers (see Figure below), which are formed through strong V–S covalent bonds and extend along the b axis direction (defined as the short axis, [010]) but are linked with each other by intermolecular van der Waals force between V and S atoms in the a and c axis directions. ,,,,− ,− It has been shown that such a highly anisotropic ribbonlike structure enables Bi 2 S 3 and Sb 2 S 3 nanoscale crystals to preferentially grow into 1D nanostructures along the [V 4 S 6 ] n extending direction. ,,− The ternary (Bi x Sb 1– x ) 2 S 3 solid solutions are formed by means of the isostructural cation replacement between Bi and Sb ions. ,,, Therefore, they retain the crystal structural characteristics of orthorhombic Bi 2 S 3 and Sb 2 S 3 and prefer to grow into 1D nanostructures, for example, the nanorods. At the same time, it can be predicted that, like the endmembers Bi 2 S 3 and Sb 2 S 3 , ,,− these (Bi x Sb 1– x ) 2 S 3 (0 < x < 1) solid solution nanorods should possess the crystallographic feature that they grow along the b axis direction ([010]).…”

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

“…Interestingly, these four compounds V 2 VI 3 (V = Sb, Bi; VI = S, Se) share a common crystal structure, that is, the orthorhombic structure, − ,− which is called the isostructure. Such a structural characteristic facilitates the formation of ternary solid solutions over a wide range of compositions by an equivalent cation (Sb 3+ , Bi 3+ ) or anion (S 2– , Se 2– ) substitution mechanism. − ,,− ,, This mechanism is found to occur not only in large crystals of V 2 VI 3 natural minerals − or thin films , but also in artificially synthetic nanocrystals, such as (Sb 1– x Bi x ) 2 Se 3 nanowires, Sb 2 Se 3– x S x (0 < x < 3) nanotubes, and (Bi x Sb 1– x ) 2 S 3 nanorods. , Clearly, the isostructural substitution is a promising strategy for composition regulation of a variety of nanomaterials. A series of continuous substitutional solid solutions of (Bi x Sb 1– x ) 2 S 3 with different Sb/Bi ratios are formed between isostructural Sb 2 S 3 and Bi 2 S 3 . ,,,,,, In contrast to the two endmembers Sb 2 S 3 and Bi 2 S 3 , however, the concerns and research studies are limited on ternary (Bi x Sb 1– x ) 2 S 3 (0 < x < 1) nanocrystals on the aspects of preparation, size, morphology and composition control, and physical property. , …”

Section: Introductionmentioning

confidence: 99%

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Composition-Dependent Aspect Ratio and Photoconductivity of Ternary (Bi_xSb_1–x)₂S₃ Nanorods

Wang

et al. 2018

ACS Appl. Mater. Interfaces

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The chemical composition, size and shape, and surface engineering play key roles in the performance of electronic, optoelectronic, and energy devices. VVI (V = Sb, Bi; VI = S, Se) group materials are actively studied in these fields. In this paper, we introduce a colloidal method to synthesize uniform ternary (BiSb)S (0 < x < 1) nanorods. These nanorods show composition-dependent aspect ratios, enabling their composition, size, and shape control by varying Bi/Sb precursor ratios. It is found that the surface passivation by various thiols (L-SH) efficiently enhances the photoconductivity and optical responsive capability of (BiSb)S nanorods when used as active materials in indium tin oxide (ITO)/(BiSb)S/ITO optoelectronic devices. Meanwhile, the increase of Sb content causes a gradual deterioration of photoconductivity of thiol-passivated nanorods. We propose that the thiol passivation is able to reduce the number of S vacancies, which act as the recombination centers (trapped states) for photogenerated electrons and holes, and thus boosts the carrier transport in (BiSb)S nanorods, and in particular that the composition-related conductivity deterioration is attributed to the increase of unpassivated S vacancies and surface oxidation due to the rise of Sb content.

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“…Among the different studies on Bi 2 S 3-based solar cells, many reports are on the thin film-based solar cells (Wang et al 2007;Moreno-García et al 2011;Becerra et al 2011) and photoelectrochemical solar cells (PEC) (Bhattacharya and Pramanik 1982;Mane et al 2007;Rajalakshmi et al 2013;Narayanan et al 2013;Jana et al 2009;Rath et al 2011). These days, Bi 2 S 3 has received considerable attention as an absorber in photovoltaic applications (Kamat 2008).…”

Section: Introductionmentioning

confidence: 99%

TiO2 photoanode sensitized with nanocrystalline Bi2S3: the effect of sensitization time and annealing on its photovoltaic performance

Kulkarni¹,

Prasad

Pathan

et al. 2015

Appl Nanosci

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This work deals with the sensitization of the porous TiO 2 films of thickness about 4 lm deposited on fluorine-doped tin oxide with nanocrystalline Bi 2 S 3 for photovoltaic application. The sensitization was achieved for four different sensitization times employing chemical solution deposition with bismuth nitrate and sodium thiosulphate as precursors for Bi 3? and S 2-, respectively. The unsensitized and sensitized photoelectrodes were characterized using X-ray diffractometry, scanning electron microscopy and diffused reflectance spectroscopy. XRD patterns show the signatures of both anatase TiO 2 and orthorhombic Bi 2 S 3 in the sensitized photoanodes. However, crystallinity of Bi 2 S 3 increased with increase in sensitization time from 10 to 40 min. The temporal effect of sensitization and annealing on the photovoltaic performance of the solar cells fabricated using four different photoelectrodes was studied using the photocurrent density versus photovoltage curves. Annealing apparently improved the photovoltaic performance of photoanodes. The best performance was obtained for cell fabricated using annealed TiO 2 /Bi 2 S 3 photoanode after 30 min sensitization time showing V oc * 0.37 mV, J sc * 0.52 mA/cm 2 , FF * 68 and 0.43 %.

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Improved photoelectrochemical performance of (Bi1−xSbx)2S3 photoanodes

Cited by 13 publications

References 24 publications

Physical properties of chalcogenide Sn–Bi–S graded thin films annealed in argon

Physical properties of chalcogenide Sn–Bi–S graded thin films annealed in argon

Composition-Dependent Aspect Ratio and Photoconductivity of Ternary (Bi_xSb_1–x)₂S₃ Nanorods

TiO2 photoanode sensitized with nanocrystalline Bi2S3: the effect of sensitization time and annealing on its photovoltaic performance

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Improved photoelectrochemical performance of (Bi1−xSbx)2S3 photoanodes

Cited by 13 publications

References 24 publications

Physical properties of chalcogenide Sn–Bi–S graded thin films annealed in argon

Physical properties of chalcogenide Sn–Bi–S graded thin films annealed in argon

Composition-Dependent Aspect Ratio and Photoconductivity of Ternary (BixSb1–x)2S3 Nanorods

TiO2 photoanode sensitized with nanocrystalline Bi2S3: the effect of sensitization time and annealing on its photovoltaic performance

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Composition-Dependent Aspect Ratio and Photoconductivity of Ternary (Bi_xSb_1–x)₂S₃ Nanorods