Improved properties of organic light-emitting devices by utilizing CsN3 n-type doped electron transport layer

Yao-yao, 于瑶瑶 Yu; Xing-ming, 陈星明 Chen; Yu, 金 玉 Jin; Zhi-jun, 吴志军 Wu; Yan, 陈燕 Chen

doi:10.3788/yjyxs20163108.0773

液晶与显示

2016

DOI: 10.3788/yjyxs20163108.0773

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Improved properties of organic light-emitting devices by utilizing CsN3 n-type doped electron transport layer

于瑶瑶 Yu Yao-yao¹,

陈星明 Chen Xing-ming²,

金玉 Jin Yu³

et al.

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Improved properties of organic light-emitting devices by utilizing CsN3 n-type doped electron transport layer

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