Improved Regrowth Interface of AlGaInAs/InP-Buried-Heterostructure Lasers by In-Situ Thermal Cleaning

Improvement in the current-gain of a 1.3-µm npn-AlGaInAs/InP transistor laser using a thin p-GaInAsP base layer

“…Subsequently, a buried hetero (BH) structure with n=p=n=p-InP current-blocking layers was formed through selective regrowth under established conditions for the AlGaInAs QWs high-quality BH structure in our previous report. 16,17) After this selective regrowth, three step regrowths were performed. First, a p-GaInAsP base layer (50 nm thick; E g = 1.19 eV and N A = 1 × 10 18 cm −3 ) and an n-GaInAsP collector layer (40 nm thick; E g = 1.19 eV and N D = 1 × 10 18 cm −3 ) were grown, and a narrow stripe structure was formed by RIE.…”

InP membrane integrated photonics research

“…The values can be varied through different surface cleaning conditions (wet cleaning as well as in-situ chamber annealing). For example, in the Tokyo Tech's MOVPE chamber, the value of S×τ could be as low as 15 nm for in-situ chamber annealing under PH 3 , 650 • C for 45 min, although the value is about 1000 nm for in-situ chamber annealing under AsH 3 , 650 • C for 45 min [54].…”

Continuous-wave operation of a 1.3 μm wavelength npn AlGaInAs/InP transistor laser up to 90 °C

“…Following in situ thermal cleaning under PH 3 atmosphere, for removing the oxidized surface, a n/p/n/p-InP thyristor structure was deposited for current blocking as well we optical confinement. [24][25][26][27] Please note the stripe width of W is defined as this metsa width (the width of QWs). Subsequently, a p-GaInAsP base layer (100 nm, E g = 1.03 eV) and a n-GaInAsP layer (40 nm, E g = 1.03 eV) were grown and etched at both sides of the stripe by SiO 2 mask.…”