Improved reliability of a-IGZO thin-film transistor under positive gate bias stress by utilizing NH3 plasma treatment

Wu, Wangran; Xu, Wenting; Tian, Hao; Yang, Guangan; Yu, Zuoxu; Huang, Tingrui; Sun, Weifeng

doi:10.1016/j.microrel.2023.115257

Cited by 2 publications

(1 citation statement)

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“…4 indicates that the concentration of pre-existing VO in the a-IGZO is relatively small [33]. When the electrons generated after ionization of pre-existing VO drift further toward the back surface of the a-IGZO under the negative gate bias, those electrons with high energy may break weak metal-oxygen bonds, thereby simultaneously triggering the generation of Oi and VO as Frenkel defects [34,35]. Ionization of the newly generated VO further increases SS and the generated Oi increases Vth of the a-IGZO TFT, which is consistent with simultaneous occurrence of increase of SS and Vth in the second degradation stage as shown in Fig.…”

Section: Resultsmentioning

confidence: 99%

Increased Threshold Voltage of Amorphous InGaZnO Thin-Film Transistors After Negative Bias Illumination Stress

Hong,

Zhang,

Zhang

et al. 2024

IEEE J. Electron Devices Soc.

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Degradation phenomena featured with positive shift of the on-state transfer curve are reported for the amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs) under negative bias illumination stress (NBIS). Such a positive shift is absent when the gate bias or the illumination is independently applied. With the assistance of TCAD simulation, the positive shift of the transfer curve is attributed to the generation of acceptor-like trap states, which is proposed to be due to oxygen interstitials produced as a consequence of electron generation by the illumination, acceleration under the effect of negative gate bias, and breaking weakly bonded oxygen. The proposed degradation mechanism is consistent with the low frequency noise characteristics and the degradation behavior under bipolar gate bias stress of the TFTs after NBIS. The whole degradation phenomena for the a-IGZO TFT under the NBIS are then consistently explained.

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Section: Resultsmentioning

confidence: 99%