Improved reliability of red GaInP vertical-cavity surface-emitting lasers using bias-induced annealing

Herrick, Robert W.; Petroff, P. M.

doi:10.1063/1.121320

Cited by 16 publications

(3 citation statements)

References 6 publications

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“…2(c), this boundary varies from wafer to wafer, and also depends on stress time. Similar observations of two different degradation modes have been reported elsewhere [6]- [8], [21], [22], and will be discussed in more detail shortly. The variable test current degradation results in Fig.…”

Section: Variable Test Current Al Gasupporting

confidence: 76%

Sixty Thousand Hour Light Output Reliability of AlGaInP Light Emitting Diodes

Grillot

Krames

Zhao

et al. 2006

IEEE Trans. Device Mater. Relib.

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Both fixed current density and variable current density stress conditions are used to study light output degradation of (Al x Ga 1 x ) 0 5 In 0 5 P light-emitting diodes (LEDs) as functions of LED stress current and LED stress time. Quantification of the resulting data indicates that (Al x Ga 1 x ) 0 5 In 0 5 P LED degradation, , is a linear function of current density, , and a logarithmic function of stress time, , for stress times as long as 60 000 hours in duration. For stress times long enough and current densities high enough to saturate any short-term effects, (Al x Ga 1 x ) 0 5 In 0 5 P LED degradation is therefore quantified by the empirical equation = 1 + 2 + ( 3 + 4 ) ln( ), where 1 , 2 , 3 , and 4 are independent of LED stress current and LED stress time. Within the limits of the data presented here, this equation is shown to accurately describe light output degradation of individual LED lamps, the average degradation behavior of individual LED wafers, and the average degradation behavior of a distribution of multiple LED wafers. The resulting expression may thus provide helpful guidance in quantifying the tradeoff between LED flux and LED degradation, both of which depend linearly on current density.

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Section: Variable Test Current Al Gasupporting

confidence: 76%

Sixty Thousand Hour Light Output Reliability of AlGaInP Light Emitting Diodes

Grillot

Krames

Zhao

et al. 2006

IEEE Trans. Device Mater. Relib.

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“…In either case, gradual degradation of optical power eventually occurs after a sufficient incubation time. Power improvements during aging are consistent with reported improvements in nonradiative lifetimes due to current annealing observed by others in phosphide-based epitaxial material [ [10][11][12][13] ].…”

Section: Resultssupporting

confidence: 90%

Aging mechanisms of broad area high-power ~800nm laser diodes

McVay,

Deri,

et al. 2024

High-Power Diode Laser Technology XXII

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Improved lifetime of high-power broad area laser diodes will enhance their utility for manufacturing, scientific, and medical laser systems. However, factors contributing to gradual degradation of diode laser performance are not fully understood. Here we study the aging mechanisms of ~800 nm aluminum-free laser diodes grown by solid-source MBE. Oxygen was intentionally introduced at three different concentration levels into the quantum well (QW) and waveguide (WG) at concentrations <5×10 15 cm -3 . Diode power, slope efficiency (SEth), threshold current (Ith), and device parameters such as QW and WG lifetimes were measured at discrete time steps throughout the aging run. The data show that lasing characteristics prior to aging are degraded by oxygen introduction, but the gradual power degradation rate of ~5% over 500 hours at current density 1.74 kA/cm 2 does not change with oxygen concentration. Aging-induced changes in nonradiative lifetimes and threshold were observed for shorter aging times, but stabilized after ~100 hrs. and cannot explain the observed power degradation. This suggests that gradual degradation in these devices is not due to nonradiative recombination at low levels of point defects. The data shows that this degradation results primarily from changes in slope efficiency, and simulation of these results suggests that the power degradation arises from increased intracavity absorption (ICA). Efforts to slow ICA growth, instead of efforts to control low levels of nonradiative recombination centers, may be the most fruitful path forward to improve laser diode lifetime.

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“…In fact, it has recently been shown that the solar cell recovery is due to the annealing of the H2 hole trap. 15 Herrick et al 16 also reported an increase in VCSEL power output ͑and lifetime͒ following injection annealing, but there is insufficient data to make meaningful comparisons with our results. Similarly, the reduction of recombination currents during burn in of InGaP/GaAs HBT's has also been reported but not identified with any particular defect.…”

Section: Discussionmentioning

confidence: 46%

Influence of deep level impurities on modulation response of InGaP light emitting diodes

Guina

Dekker²,

Tukiainen

et al. 2001

Journal of Applied Physics

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The effect of deep level impurities on static and dynamic properties of InGaP-based light emitters grown by all-solid-source molecular-beam epitaxy is analyzed. The improvement of the output power and the decrease in modulation bandwidth induced by the burn-in process are explained by the recombination enhanced annealing of one deep level trap. This assumption is experimentally proven through comparison of small-signal analysis for resonant cavity light-emitting diodes operating at 650 nm and deep level transient spectroscopy results. Finally, the concentration of the midgap recombination center N3 in the active region is shown to play an important role in the performance of the InGaP devices.

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Improved reliability of red GaInP vertical-cavity surface-emitting lasers using bias-induced annealing

Cited by 16 publications

References 6 publications

Sixty Thousand Hour Light Output Reliability of AlGaInP Light Emitting Diodes

Sixty Thousand Hour Light Output Reliability of AlGaInP Light Emitting Diodes

Aging mechanisms of broad area high-power ~800nm laser diodes

Influence of deep level impurities on modulation response of InGaP light emitting diodes

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