Improved resistive switching performance and realized electric control of exchange bias in a NiO/HfO<sub>2</sub> bilayer structure

Lu, Yu; Yuan, Yuan; Liu, Ruobai; Liu, Tianyu; Chen, Jiarui; Wei, Lujun; Wu, Di; Zhang, Wei; You, Biao; Du, Jun

doi:10.1039/d3cp03106c

Cited by 2 publications

(2 citation statements)

References 72 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…To realize electric control of |H EB | by changing the resistance state of the device, a Hall cross structure is chosen, which is favorable for characterizing its magnetic and electrical properties by alternatively measuring the anomalous Hall effect (AHE) and resistive switching (RS), respectively. 26 Unlike previous studies whose localized M-H loops can only be measured using a focused Magneto-optic Kerr magnetometer (F-MOKE), 23,27,28 we probe the localized magnetic properties of samples with perpendicular magnetic anisotropy using AHE measurements. This is an improvement for further applications in spintronics devices such as building array structures and multiple-layer stacks.…”

Section: ■ Results and Discussionmentioning

confidence: 99%

Resistive Memristor Coupled with Multilevel Perpendicular Magnetic States

Hsin,

Lin,

Lin

et al. 2023

ACS Appl. Electron. Mater.

View full text Add to dashboard Cite

Memristor is an increasingly important research field for inmemory computing (IMC) due to its significant potential in neuromorphic computing. A resistive memristor that can integrate components with nonvolatility and high-density features, such as spintronics, would be a great blessing for the IMC technology. We demonstrate a Pt/Co/NiO device that exhibited multilevel perpendicular exchange bias (EB) with resistive switching (RS) behaviors. It arose from the modulated Co-NiO exchange coupling with the formation/breaking of the conductive filament (CF) within the NiO layer. With atomistic simulation, we show that the multilevel RS stemmed from the modulation of CF size and distribution at the Co−NiO interface, which in turn influenced intermediate levels of EB along the perpendicular direction. It illustrates the possibility of integrating resistive memristors and spintronic devices. Compared with similar studies, our device possesses the advantages of perpendicular magnetic anisotropy and tunable unipolar/bipolar switching.

show abstract

Section: ■ Results and Discussionmentioning

confidence: 99%

Resistive Memristor Coupled with Multilevel Perpendicular Magnetic States

Hsin,

Lin,

Lin

et al. 2023

ACS Appl. Electron. Mater.

View full text Add to dashboard Cite

show abstract

“…Over the past decade, the investigation on RS mechanisms has hold dispute. At present, the most widely accepted theory is the conducting filament model where the random growth and disruption of conducting filaments bring about the dispersed RS parameters. , Therefore, a deeper understanding of the RS mechanism is still crucial for enhancing the reliability and stability of the RRAM device.…”

Section: Introductionmentioning

confidence: 99%

Understanding the Reversible Transition of Unipolar and Bipolar Resistive Switching Characteristics in Solution-Derived Nanocrystalline Au–Co₃O₄ Thin-Film Memristors

Yao,

Li,

Zhang

et al. 2024

ACS Omega

View full text Add to dashboard Cite

Nanocrystalline Au−Co 3 O 4 thin films were fabricated through a facile solution-processing method, and voltagepolarity-dependent resistive switching (RS) characteristics including variability of Set/Reset voltages, stability of cycling endurance, and carriers transport mechanism were studied in the Pt/Au− Co 3 O 4 /Pt memory devices. The switching voltages of the Set and Reset processes in the bipolar RS memristors exhibited lower variability as compared to the unipolar resistance switching devices. Moreover, the switching performance of cycle-to-cycle endurance in bipolar mode had a smaller fluctuation than those of unipolar switching behavior. Based on the current−voltage curve fitting analysis, it was found that Ohmic-conduction behaviors dominated the carriers transport of low-resistance state regardless of unipolar or bipolar switching behaviors. The carrier transport of high resistance state was governed following Poole−Frenkel emission and Schottky emission mechanisms in the unipolar and bipolar switching modes, respectively. The physical switching mechanism of Pt/Au−Co 3 O 4 /Pt memory devices was proposed using the model by means of growth and disruption of conducting filaments, involved in memory effects of thermochemical mechanism and valence change mechanism in the unipolar and bipolar RS, respectively. The proposed model following the finite element method revealed the roles of electrical field distribution and temperature gradient to further clarify the RS mechanism. Our results open a door for understanding and optimizing oxide-based thin-film resistance switching memory devices.

show abstract

Improved resistive switching performance and realized electric control of exchange bias in a NiO/HfO₂ bilayer structure

Abstract: The fluctuation of switching parameters is unavoidable in the conductive filaments (CFs)-type resistive switching (RS) devices, which restricts the application in resistive random-access memory. Here, we employed an uninsulated antiferromagnetic...

Cited by 2 publications

References 72 publications

Resistive Memristor Coupled with Multilevel Perpendicular Magnetic States

Resistive Memristor Coupled with Multilevel Perpendicular Magnetic States

Understanding the Reversible Transition of Unipolar and Bipolar Resistive Switching Characteristics in Solution-Derived Nanocrystalline Au–Co₃O₄ Thin-Film Memristors

Contact Info

Product

Resources

About

Improved resistive switching performance and realized electric control of exchange bias in a NiO/HfO2 bilayer structure

Abstract: The fluctuation of switching parameters is unavoidable in the conductive filaments (CFs)-type resistive switching (RS) devices, which restricts the application in resistive random-access memory. Here, we employed an uninsulated antiferromagnetic...

Cited by 2 publications

References 72 publications

Resistive Memristor Coupled with Multilevel Perpendicular Magnetic States

Resistive Memristor Coupled with Multilevel Perpendicular Magnetic States

Understanding the Reversible Transition of Unipolar and Bipolar Resistive Switching Characteristics in Solution-Derived Nanocrystalline Au–Co3O4 Thin-Film Memristors

Contact Info

Product

Resources

About

Improved resistive switching performance and realized electric control of exchange bias in a NiO/HfO₂ bilayer structure

Understanding the Reversible Transition of Unipolar and Bipolar Resistive Switching Characteristics in Solution-Derived Nanocrystalline Au–Co₃O₄ Thin-Film Memristors