Improved Sensitivity and Stability for SnO Ion-Sensitive Field-Effect Transistor-Based pH Sensor by Electrical Double Layer Gate and AlO Sensitive Film<sub />
                  <sub />
                  <sub />

Yang, Xianghong; Ao, Jiapei; Li, Xin; Hu, Long; Liu, Weihua; Han, Chuanyu; Wang, Xiaoli

doi:10.1109/ted.2022.3204595

Cited by 6 publications

(1 citation statement)

References 31 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…In a study by W. Bunjongpru et al, 2008, 144 an innovative approach was adopted to deploy the active membrane layer for AlN-ISFET devices without heating the substrate and post-annealing. 159 This involved utilizing a reactive gas-timing RF magnetron sputtering deposition method along with the CMOS process . AlN thin film was chosen for its advantageous mechanical and electrical characteristics, including its chemical stability, high thermal conductivity, acoustic velocity, and piezoelectricity.…”

Section: Review Of Literaturementioning

confidence: 99%

Review–Silicon Based ISFETs: Architecture, Fabrication Process, Sensing Membrane, and Spatial Variation

Gupta,

Sharma,

Goswami

2024

ECS J. Solid State Sci. Technol.

View full text Add to dashboard Cite

The main characteristics of a good pH detecting system are higher sensitivity, ease of manufacturing process, and a micro-system. Ion sensitive field effect transistors (ISFETs), which are frequently employed as biosensors, offer significant advantages, and have gained prominence in various sectors. This review has highlighted the factors influencing sensitivity in pH sensing and explored various methods to enhance the sensor’s sensitivity and overall performance. Miniature sensors play a crucial role, especially in industries, biomedical and environmental applications. For accurate pH measurements in both in-vivo and in-vitro systems, as well as for the device’s miniaturization, the reference electrode (RE) must be positioned precisely in an ISFET device, considering both the device’s physical dimensions and the distance between the sensing surface and the RE. Hence, this review provides valuable insights into the importance of sensitivity, miniaturization, and the role of the RE in ISFET devices, contributing to the advancement and application of pH sensing technology indiverse fields.

show abstract

Section: Review Of Literaturementioning

confidence: 99%