Improved sensitization efficiency in Er<sup>3+</sup> ions and SnO<sub>2</sub> nanocrystals co-doped silica thin films

Zhang, Xiaowei; Lin, Shaobing; Lin, Tao; Zhang, Pei; Xu, Jun; Xu, Ling; Chen, Kunji

doi:10.1039/c5cp00246j

Cited by 27 publications

(8 citation statements)

References 33 publications

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“…where ε is the dielectric constant, m * is the effective mass, h c is the Planck constant, and the Bohr radius a Bohr =52.9 Å. For SnO 2 nanobelts, ε=13.5ε o [28,31], m * =0.35m o [32] and r Bohr =2.4 nm from equation (7). The Mott critical density is N C =2.8×10 19 cm −3 from equation (8).…”

Section: Mit Analysismentioning

confidence: 99%

Metal-to-insulator transition induced by UV illumination in a single SnO₂nanobelt

2017

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An individual tin oxide (SnO) nanobelt was connected in a back-gate field-effect transistor configuration and the conductivity of the nanobelt was measured at different temperatures from 400 K to 4 K, in darkness and under UV illumination. In darkness, the SnO nanobelts showed semiconductor behavior for the whole temperature range measured. However, when subjected to UV illumination the photoinduced carriers were high enough to lead to a metal-to-insulator transition (MIT), near room temperature, at T = 240 K. By measuring the current versus gate voltage curves, and considering the electrostatic properties of a non-ideal conductor, for the SnO nanobelt on top of a gate-oxide substrate, we estimated the capacitance per unit length, the mobility and the density of carriers. In darkness, the density was estimated to be 5-10 × 10 cm, in agreement with our previously reported result (Phys. Status Solid. RRL 6, 262-4 (2012)). However, under UV illumination the density of carriers was estimated to be 0.2-3.8 × 10 cm near T , which exceeded the critical Mott density estimated to be 2.8 × 10 cm above 240 K. These results showed that the electrical properties of the SnO nanobelts can be drastically modified and easily tuned from semiconducting to metallic states as a function of temperature and light.

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Section: Mit Analysismentioning

confidence: 99%

Metal-to-insulator transition induced by UV illumination in a single SnO₂nanobelt

2017

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“…Another effective way to enhance the emission efficiency of Er 3+ ions is co-doping with wider band gap semiconductors such as In 2 O 3 or SnO 2 NCs, which could transfer absorbed energy to nearby Er 3+ ions and suppress back energy transfer process [14][15][16][17]. In our previous work, the NIR photoluminescence (PL) intensity of Er 3+ ions was improved about 100-fold by co-doping In 2 O 3 NCs as sensitizer [15].…”

Section: Introductionmentioning

confidence: 99%

Near-infrared light emitting devices from Er doped silica thin films via introducing SnO₂ nanocrystals

Wang¹,

Zhang²,

Chen³

et al. 2022

Phys. Scr.

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To get high performance light emitting devices on Si platform with emission wavelength at 1.55 μm is a challenge for future Si-based opto-electronic integration chips. In this paper, we fabricated near-infrared light-emitting devices based on Er/SnO2 co-doped silica thin films. The introduction of SnO2 nanocrystals with controllable size and density not only contributes to the near-infrared light emission enhancement of Er3+ ions at 1.55 μm, but also provides an effective carrier transport channelto realize efficient and stable electro-luminescence. The corresponding devices exhibit an external quantum efficiency of 5.4% at near infrared light region and the power efficiency is about 1.52 ×10-3. Our present work lays a solid foundation for facilitating Si-based light source towards practical application in the field of optoelectronic interconnection.

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“…It is also found that nanoparticles of SnO 2 can effectively sensitize the emission of some RE ions [11] . Zhang X et al proposed that the effective sensitization process can be realized because of the suitable spectral overlap between the defect state energy level of SnO 2 nanoparticles and the excitation level of RE ions [12] .…”

Section: Introductionmentioning

confidence: 99%

Enhanced Photoluminescence of Tb3+ Ions Ce3+ Ions and SnO2 Nanocrystals Co-doped Silica Thin Films

Zhang

Feng

et al. 2022

Opt Quant Electron

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Co-doping Ce 3+ ions and size-tunable SnO 2 nanocrystals into Tb 3+ ions embedded silica thin lms produces a ninefold enhancement of Tb 3+ related emission. Firstly, by optimizing the doping ratio of Sn 4+ ions, the size of SnO 2 nanoparticles was well tailored for achieving a greatly enhanced photoluminescence emission from Tb 3+ ions. Another method to signi cantly enhance Tb 3+ emission was increasing the proportion of Ce 3+ , and this method only require a relatively small amount rare earth (RE) ions for obtaining an obvious emission enhancement. On the other side, companied with the increase of Ce 3+ ions concentration, the growth of CeO 2 nanoparticles were proved seriously attenuated the photoluminescence intensity of Tb 3+ ions. Finally, we also analyzed the in uence of annealing temperature on the photoluminescence intensity. These results indicated that an appropriate proportion of Ce 3+ ions and suitable size of SnO 2 nanocrystals can effectively sensitize the luminescence of Tb 3+ ions.

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Improved sensitization efficiency in Er³⁺ ions and SnO₂ nanocrystals co-doped silica thin films

Cited by 27 publications

References 33 publications

Metal-to-insulator transition induced by UV illumination in a single SnO₂nanobelt

Metal-to-insulator transition induced by UV illumination in a single SnO₂nanobelt

Near-infrared light emitting devices from Er doped silica thin films via introducing SnO₂ nanocrystals

Enhanced Photoluminescence of Tb3+ Ions Ce3+ Ions and SnO2 Nanocrystals Co-doped Silica Thin Films

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Improved sensitization efficiency in Er3+ ions and SnO2 nanocrystals co-doped silica thin films

Cited by 27 publications

References 33 publications

Metal-to-insulator transition induced by UV illumination in a single SnO2nanobelt

Metal-to-insulator transition induced by UV illumination in a single SnO2nanobelt

Near-infrared light emitting devices from Er doped silica thin films via introducing SnO2 nanocrystals

Enhanced Photoluminescence of Tb3+ Ions Ce3+ Ions and SnO2 Nanocrystals Co-doped Silica Thin Films

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Improved sensitization efficiency in Er³⁺ ions and SnO₂ nanocrystals co-doped silica thin films

Metal-to-insulator transition induced by UV illumination in a single SnO₂nanobelt

Metal-to-insulator transition induced by UV illumination in a single SnO₂nanobelt

Near-infrared light emitting devices from Er doped silica thin films via introducing SnO₂ nanocrystals