Improved stability of thin cobalt disilicide films using BF2 implantation

Wang, Q. F.; Tsai, Jiunn-Yann; Osburn, C. M.; Chapman, Richard; McGuire, G. E.

doi:10.1063/1.108022

Cited by 25 publications

(9 citation statements)

References 9 publications

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“…This behavior is in agreement with previous papers 14,32,33 reporting that the fluorine presence at the silicide/silicon ͑001͒ interface produce an increase of the silicide resistance to agglomeration. These precipitates can increase the energy needed for the reaction at the silicide/silicon interface, inducing also an increase of the CoSi 2 thermal stability.…”

Section: Activation Energy Measurementssupporting

confidence: 93%

“…The epitaxial cobalt silicide has a flatter interface with silicon and a much higher thermal stability 10 with respect to the polycrystalline CoSi 2 . 14,15 Several theoretical models [16][17][18][19][20] of polycrystalline films thermal stability have been presented in the last years. 11 However, one potential problem with CoSi 2 is its inferior thermal stability compared to TiSi 2 and WSi 2 in polycide structures.…”

Section: Introductionmentioning

confidence: 99%

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Thermal stability of thin CoSi2 layers on polysilicon implanted with As, BF2, and Si

Via¹

1998

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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The thermal stability of thin cobalt silicide layers grown on preamorphized chemical vapor deposited silicon layers has been studied in the temperature range between 950 and 1100°C. The morphology of the starting layers and their evolution during the thermal processes was analyzed by transmission electron microscopy, atomic force microscopy and Rutherford backscattering spectroscopy. The observed increase in sheet resistance with the annealing time has been correlated to the agglomeration process taking into account the dependence of the resistivity on film thickness and carrier mean free path. Sheet resistance measurements have been used to study the agglomeration process of CoSi 2 by varying temperature and substrate doping ͑As, BF 2 , and Si implants͒. The process is thermally activated with an activation energy of 4.3 eV for the Si implanted samples. The BF 2 implanted substrate show a higher activation energy (ϳ5.4 eV), while the arsenic implanted a lower one (ϳ3.6 eV). This difference is attributed to the weakening of the Co-Si bonds by arsenic atoms and to the presence of some fluorine precipitates at the CoSi 2 /Si interface that increase the energy needed for the reaction at the silicide/silicon interface.

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Section: Activation Energy Measurementssupporting

confidence: 93%

Section: Introductionmentioning

confidence: 99%

Thermal stability of thin CoSi2 layers on polysilicon implanted with As, BF2, and Si

Via¹

1998

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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“…Furthermore, the dopants implanted in the polysilicon layer also have a great influence on the thermal stability of the silicide. [7][8][9] Recently, several theoretical models have been presented [10][11][12] on the thermal stability of the polycrystalline layer. These models are based on the assumption that agglomeration in thin films is predominantly caused by thermal grooving at grain boundaries via matter transport away from the high-energy interfaces.…”

Section: Introductionmentioning

confidence: 99%

Thermal stability of cobalt silicide stripes on Si (001)

Alberti

Via

Raineri

et al. 1999

Journal of Applied Physics

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The effect of lateral scaling on the thermal stability of cobalt disilicide has been investigated on Si ͑001͒ substrates. Resistance measurements on four terminal resistors, with linewidth dimensions ranging from 1.3 to 0.5 m, have been performed after annealing in the range between 900 and 1000°C. The resistance increases faster in the stripes than in blanket regions. This degradation process has been correlated to the morphological change in the strip cross section, as analyzed by transmission electron microscopy and atomic force microscopy. Grain growth, degradation processes at the line edge, and surface and interface roughness have been observed. These analyses show that the lateral constraints of the silicide lines are mainly responsible for the lowering of the silicide thermal stability compared with blanket regions. Moreover, from measurements of agglomerated silicide grains in equilibrium with the substrate, the silicide surface free energy is 2.3 times the free energy of the CoSi 2 /Si interface.

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“…14 The dopants implanted in the poly-Si layer have a great influence on thermal stability property. 15,16 …”

Section: Resultsmentioning

confidence: 98%

Co Si x thermal stability on narrow-width polysilicon resistors

Chen

Wang

et al. 2006

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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In this study, the thermal stability of polysilicon lines with various widths and different dopant types in 90-nm processes is investigated. The thermal behavior of silicides formed on N+ polyresistors and P+ polyresistors is very different. The worst thermal stability is found on the narrower N+ polyresistors, while an abnormal thermal behavior is observed on P+ polyresistors. This anomalous thermal-stability change with different drawn linewidths of P+ polyresistors is related to the grain-size distribution and the actual polyresistor linewidth. Also, it is interesting to find that the voids formed in P+ polyresistors lead to a stepped increase in sheet resistance.

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Improved stability of thin cobalt disilicide films using BF2 implantation

Cited by 25 publications

References 9 publications

Thermal stability of thin CoSi2 layers on polysilicon implanted with As, BF2, and Si

Thermal stability of thin CoSi2 layers on polysilicon implanted with As, BF2, and Si

Thermal stability of cobalt silicide stripes on Si (001)

Co Si x thermal stability on narrow-width polysilicon resistors

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